P29 Datasheet. Specs and Replacement
Type Designator: P29 📄📄
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.03 W
Maximum Collector-Base Voltage |Vcb|: 12 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 75 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
P29 Substitution
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P29 datasheet
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PD - 97550 AUIRFP2907Z AUTOMOTIVE GRADE HEXFET Power MOSFET D Features V(BR)DSS 75V Advanced Process Technology Ultra Low On-Resistance RDS(on) max. 4.5m G 175 C Operating Temperature Fast Switching ID 170A S Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed for... See More ⇒
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MCC Micro Commercial Components TM TIP29,A,B,C(NPN) 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 TIP30,A,B,C(PNP) Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates 1.0 Amp RoHS Compliant. See ordering information) Complementary Marking Type Number Rth(jc) is 4.167OC/W, Rth(ja) i... See More ⇒
NTP2955 MOSFET Power, Single, P-Channel, TO-220 -60 V, -12 A Features www.onsemi.com Low RDS(on) Rugged Performance V(BR)DSS RDS(on) Typ ID MAX Fast Switching -60 V 156 mW @ -10 V -12 A These are Pb-Free Devices* P-Channel Applications D Industrial Automotive Power Supplies G MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) S Parameter Symb... See More ⇒
NTP2955 Power MOSFET -60 V, -12 A, Single P-Channel, TO-220 Features Low RDS(on) http //onsemi.com Rugged Performance Fast Switching V(BR)DSS RDS(on) Typ ID MAX Pb-Free Package is Available* -60 V 156 mW @ -10 V -12 A Applications Industrial P-Channel Automotive D Power Supplies MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Va... See More ⇒
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO-220 AB package. http //onsemi.com Features 1 AMPERE Pb-Free Packages are Available* POWER TRANSISTORS COMPLEMENTARY SILICON 40, 60, 80, 100 VOLTS, 80 WATTS MARKING DIAGRAM 4 TO-220AB TIPxxxG CASE 2... See More ⇒
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
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TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO-220 package. www.onsemi.com Features 1 AMPERE These Devices are Pb-Free and are RoHS Compliant* POWER TRANSISTORS MAXIMUM RATINGS COMPLEMENTARY SILICON Rating Symbol Value Unit 40, 60, 80, 100 VOLTS, Col... See More ⇒
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TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO-220 package. www.onsemi.com Features 1 AMPERE These Devices are Pb-Free and are RoHS Compliant* POWER TRANSISTORS MAXIMUM RATINGS COMPLEMENTARY SILICON Rating Symbol Value Unit 40, 60, 80, 100 VOLTS, Col... See More ⇒
TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors Designed for general-purpose switching and amplifier applications. http //onsemi.com Features DC Current Gain - 15 AMPERE hFE = 20 - 70 @ IC POWER TRANSISTORS = 4.0 Adc COMPLEMENTARY SILICON Collector-Emitter Saturation Voltage - 60 VOLTS, 90 WATTS VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc Excell... See More ⇒
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
MTP2955V Preferred Device Power MOSFET 12 Amps, 60 Volts P-Channel TO-220 This Power MOSFET is designed to withstand high energy in the http //onsemi.com avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power 12 AMPERES, 60 VOLTS motor controls, these devices are particularly well suited for bridge RDS(on) ... See More ⇒
TIP2955 PNP SILICON POWER TRANSISTOR Designed for Complementary Use with the SOT-93 PACKAGE (TOP VIEW) TIP3055 Series 90 W at 25 C Case Temperature B 1 15 A Continuous Collector Current C 2 Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25 C case temperature (unless otherwi... See More ⇒
RT2P29M Composite Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RT2P29M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=100k ) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu... See More ⇒
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP29, A, B, C NPN TIP30, A, B, C PNP TO-220 Plastic Package Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi Amplifiers ABSOLUTE MAXIMUM RATINGS (Ta=25 ... See More ⇒
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS TIP2955F PNP TIP3055F NPN TO- 3P Fully Isolated Plastic Package B C E Designed for General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector-Emitter Voltage VCEO 60 V Collector-Emitter Voltage VCER 70 V Collector-... See More ⇒
AP2904EC4 Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Capable of 2.5V Gate Drive VSSS 24V Ultra-small Package Outline RSS(ON) 38m Protection Diode Built-in IS 6A RoHS Compliant & Halogen-Free Description AP2904 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po... See More ⇒
AP2910EC4 Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Capable of 2.5V Gate Drive VSSS 24V Ultra-small Package Outline RSS(ON) 22.5m Protection Diode Built-in IS 9A RoHS Compliant & Halogen-Free Description AP2910 series are from Advanced Power innovated design and silicon process technology to achieve the lowest ... See More ⇒
AP2906EY Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET G2 Lower Gate Charge BVDSS 20V D1/D2 G1 Capable of 2.5V Gate Drive RDS(ON) 35m S2 Surface mount package ID3 4.7A D1/D2 S1 SOT-26 RoHS Compliant & Halogen-Free D1/D2 Description AP2906 series are from Advanced Power innovated G1 G2 design and silicon process... See More ⇒
AFP2913W Alfa-MOS 25V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2913W, P-Channel enhancement mode -25V/-4.5A,RDS(ON)=120m @VGS=-10V MOSFET, uses Advanced Trench Technology -25V/-3.8A,RDS(ON)=155m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s... See More ⇒
AFP2911W Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2911W, P-Channel enhancement mode -20V/-4.5A,RDS(ON)=96m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-3.8A,RDS(ON)=128m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.5A,RDS(ON)=180m @VGS=-1.8V These devices are particularly suited fo... See More ⇒
Spec. No. C317A3-H Issued Date 2002.06.11 CYStech Electronics Corp. Revised Date 2005.06.29 Page No. 1/5 General Purpose PNP Epitaxial Planar Transistor BTP2907A3 Description The BTP2907A3 is designed for general purpose amplifier and high-speed switching, medium power applications. Low collector saturation voltage High speed switching. Complementa... See More ⇒
Spec. No. C733L3 Issued Date 2012.02.14 CYStech Electronics Corp. Revised Date 2014.07.25 Page No. 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -60V MTP2955L3 ID -4.8A 75m (typ.) RDSON@VGS=-10V, ID=-2.4A RDSON@VGS=-10V, ID=-1.5A 74m (typ.) Features 70m (typ.) RDSON@VGS=-10V, ID=-0.75A Simple Drive Requirement RDSON@VGS=-4.5V, ID=-1.7A 99m... See More ⇒
Spec. No. C317N3 Issued Date 2003.06.30 CYStech Electronics Corp. Revised Date 2008.03.21 Page No. 1/6 General Purpose PNP Epitaxial Planar Transistor BTP2907AN3 Description The BTP2907AN3 is designed for general purpose amplifier applications. It is housed in the SOT-23 package which is designed for low power surface mount applications. Low V CE(sat) ... See More ⇒
Spec. No. C317L3-H Issued Date 2003.04.15 CYStech Electronics Corp. Revised Date 2006.07.04 Page No. 1/5 General Purpose PNP Epitaxial Planar Transistor BTP2907AL3 Description The BTP2907AL3 is designed for general purpose amplifier applications. It is housed in the SOT-223 package which is designed for medium power surface mount applications. Low V CE(sat)... See More ⇒
Spec. No. C824L3 Issued Date 2003.07.31 CYStech Electronics Corp. Revised Date 2013.11.12 Page No. 1/7 Low V PNP Epitaxial Planar Transistor CE(sat) BTP2907SL3 Features Excellent DC current gain characteristics Low Saturation Voltage V (sat)=-0.5V(max) (I =-1A, I =-100mA). CE C B Pb-free lead plating and halogen-free package Symbol Outline BTP2907SL3... See More ⇒
Spec. No. C317S6R Issued Date 2006.11.08 CYStech Electronics Corp. Revised Date Page No. 1/5 General Purpose PNP Epitaxial Planar Transistors (dual transistors) HBP2907S6R Features Two BTP2907 chips in a SOT-363 package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference. Mount... See More ⇒
P2904BD N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 29m @VGS = 10V 40V 25A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage 20 TA= 25 C 25 ID Continuous Drain Current TA= 70 C 20 A IDM 75 Pulsed Drain ... See More ⇒
CSP2907 N PD TC=25 470 W 3.1 W/ ID VGS=10V,TC=25 209 A IDM 840 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.32 /W BVDSS VGS=0V,ID=0.25mA 75 V RDS on VGS=10V,ID=125A 3.6 4.5 m VGS th VDS=10V,ID=0.25mA 2.0 4... See More ⇒
130A 150V N-CHANNELMOSFET KNX2915A KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Features RDS(ON)=10m ( typ.)@VGS=10V Uses CRM(CQ) advancedTrench technology Extremely lowon-resistance RDS(on) Excellent QgxRDS(on) product(FOM) Qualified according to JEDECcriteria 2. Application Motor control and drive Battery management UPS(UninterrupiblePower Supplies)... See More ⇒
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130A 100V KNX2910A N-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.Applications High efficiency synchronous rectification in SMPS High speed power switching 2. Features R =5.0m @V =10 V DS(on) GS Super high dense cell design Ultra lowOn-Resistance 100%avalanchetested Lead Free and Green devices available (RoHSCompliant) 3. Pinconfiguratio... See More ⇒
130A 150V N-CHANNEL MOSFET KNX2915A KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Features RDS(ON)= 10m ( typ.)@ VGS=10V Uses CRM(CQ) advanced Trench technology Extremely low on-resistance RDS(on) Excellent QgxRDS(on) product(FOM) Qualified according to JEDEC criteria 2. Application Motor control and drive Battery management UPS... See More ⇒
N-Channel Logic Level Enhancement PP2915AD NIKO-SEM Mode Field Effect Transistor TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.GATE 29m 150V 34A G 2.DRAIN 3.SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TC = 25 C 34 Continuous Dra... See More ⇒
PP2915AK N-Channel Enhancement Mode NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D D D D D 150V 29m 31A G G. GATE D. DRAIN S. SOURCE #1 S S S G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Vo... See More ⇒
TIP2955 Silicon PNP Power Transistors DESCRIPTION With TO-247 package Complement to type TIP3055 90 W at 25 C case temperature 15 A continuous collector current APPLICATIONS Designed for general purpose switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol... See More ⇒
HGB290N10SL , HGP290N10SL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 22.7 RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capability VGS=4.5V 27.7 RDS(on),typ m Enhanced Avalanche Ruggedness 23.0 RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg Tested VGS=4.5V 28 RDS(on),typ m Lead Free, Hal... See More ⇒
NTP2955G www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) ( ) TrenchFET Power MOSFET ID (A) Qg (Typ) 100 % UIS Tested 0.062 at VGS = - 10 V - 20 - 60 12.5 0.074 at VGS = - 4.5 V - 15 APPLICATIONS Load Switch S TO-220AB G D G D S Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter S... See More ⇒
BSP296 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs 100 0.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SOT-223 D G S D G S N-Channel MOSFET A... See More ⇒
INCHANGE Semiconductor isc N-Channel MOSFET Transistor FCP290N80 FEATURES With TO-220 packaging Low switching loss Ultra low gate charge Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications AC-DC converters LED lighting Uninterruptible power supply ABSOLU... See More ⇒
isc Silicon NPN Power Transistors TIP29C DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 0.7V(Max.)@I = 1.0A CE(sat) C Complement to Type TIP30C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching ap... See More ⇒
isc N-Channel MOSFET Transistor IRFP2907Z IIRFP2907Z FEATURES Static drain-source on-resistance RDS(on) 4.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra Low On-resistance Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-... See More ⇒
isc N-Channel MOSFET Transistor IRFP2907 IIRFP2907 FEATURES Static drain-source on-resistance RDS(on) 4.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra Low On-resistance Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sour... See More ⇒
isc Silicon NPN Power Transistors TIP29 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 40V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 0.7V(Max.)@I = 1.0A CE(sat) C Complement to Type TIP30 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching appli... See More ⇒
isc Silicon NPN Power Transistors TIP29A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 0.7V(Max.)@I = 1.0A CE(sat) C Complement to Type TIP30A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching app... See More ⇒
isc Silicon PNP Power Transistor TIP2955T DESCRIPTION Excellent Safe Operating Area DC Current Gain- h =20-70@I = 4A FE C Collector-Emitter Saturation Voltage- V )= 0.8V(Max)@ I = 4A CE(sat C Complement to Type TIP2955T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifier... See More ⇒
isc Silicon NPN Power Transistors TIP29B DESCRIPTION Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 0.7V(Max.)@I = 1.0A CE(sat) C Complement to Type TIP30B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching app... See More ⇒
isc Silicon PNP Power Transistor TIP2955 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h =20-70@I = -4A FE C Collector-Emitter Saturation Voltage- V )= -1.1 V(Max)@ I = -4A CE(sat C Complement to Type TIP3055 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifi... See More ⇒
Detailed specifications: P217, P217A, P217B, P217G, P217V, P27, P27A, P28, 2N2907, P29A, P30, P302, P303, P303A, P304, P306, P306A
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