PBF259 Datasheet. Specs and Replacement

Type Designator: PBF259  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 300 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50M MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO92

 PBF259 Substitution

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PBF259 datasheet

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PBF259

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by PBF259/D High Voltage Transistors NPN Silicon PBF259 PBF259S COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol PBF259,S Unit CASE 29 04, STYLE 1 Collector Emitter Voltage VCEO 300 Vdc TO 92 (TO 226AA) Collector Base Voltage VCBO 300 Vdc Emitter Base Voltage VEBO 5.0 Vdc Collector Curre... See More ⇒

Detailed specifications: P9623, PBC107, PBC108, PBC109, PBC182, PBC182R, PBC183, PBC184, MJE340, PBF259R, PBF259RS, PBF259S, PBF493, PBF493R, PBF493RS, PBF493S, PE3100

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