All Transistors. PBF259R Datasheet

 

PBF259R Datasheet and Replacement


   Type Designator: PBF259R
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 40M MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO92
 

 PBF259R Substitution

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PBF259R Datasheet (PDF)

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PBF259R

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby PBF259/DHigh Voltage TransistorsNPN Silicon PBF259PBF259SCOLLECTOR32BASE1EMITTER1MAXIMUM RATINGS23Rating Symbol PBF259,S UnitCASE 2904, STYLE 1CollectorEmitter Voltage VCEO 300 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 300 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Curre

Datasheet: PBC107 , PBC108 , PBC109 , PBC182 , PBC182R , PBC183 , PBC184 , PBF259 , 2N2222A , PBF259RS , PBF259S , PBF493 , PBF493R , PBF493RS , PBF493S , PE3100 , PE4010 .

History: 2SD960 | 2SC637

Keywords - PBF259R transistor datasheet

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