PBF259R Datasheet, Equivalent, Cross Reference Search
Type Designator: PBF259R
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 40M MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO92
PBF259R Transistor Equivalent Substitute - Cross-Reference Search
PBF259R Datasheet (PDF)
pbf259re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby PBF259/DHigh Voltage TransistorsNPN Silicon PBF259PBF259SCOLLECTOR32BASE1EMITTER1MAXIMUM RATINGS23Rating Symbol PBF259,S UnitCASE 2904, STYLE 1CollectorEmitter Voltage VCEO 300 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 300 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Curre
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: BTB1184J3S | BSX87A | 2SB942A | D62T7540
History: BTB1184J3S | BSX87A | 2SB942A | D62T7540
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050