All Transistors. PMBTA92 Datasheet

 

PMBTA92 Datasheet and Replacement


   Type Designator: PMBTA92
   SMD Transistor Code: P2D_p2D_p2D_t2D_W2D
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO236
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PMBTA92 Datasheet (PDF)

 ..1. Size:100K  philips
pmbta92.pdf pdf_icon

PMBTA92

DISCRETE SEMICONDUCTORS DATA SHEETPMBTA92PNP high-voltage transistorProduct data sheet 2004 Jan 22Supersedes data of 1999 Apr 13NXP Semiconductors Product data sheetPNP high-voltage transistor PMBTA92FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 base2 emitterAPPLICATIONS3 collector Telephony Professional com

 ..2. Size:47K  philips
pmbta92 4.pdf pdf_icon

PMBTA92

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBTA92PNP high-voltage transistor1999 Apr 13Product specificationSupersedes data of 1998 Jul 21Philips Semiconductors Product specificationPNP high-voltage transistor PMBTA92FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 base2 emitterAPPLICATIONS3 collector

 ..3. Size:100K  nxp
pmbta92.pdf pdf_icon

PMBTA92

DISCRETE SEMICONDUCTORS DATA SHEETPMBTA92PNP high-voltage transistorProduct data sheet 2004 Jan 22Supersedes data of 1999 Apr 13NXP Semiconductors Product data sheetPNP high-voltage transistor PMBTA92FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 base2 emitterAPPLICATIONS3 collector Telephony Professional com

 9.1. Size:96K  philips
pmbta44.pdf pdf_icon

PMBTA92

PMBTA44400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistorRev. 01 22 February 2008 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.1.2 Features Low current (max. 300 mA) High voltage (max. 400 V) AEC-Q101 qua

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: FCX718 | PMBT2907A

Keywords - PMBTA92 transistor datasheet

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