PMD11K80 Datasheet. Specs and Replacement
Type Designator: PMD11K80 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 800
Package: TO3
PMD11K80 Substitution
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PMD11K80 datasheet
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD11K80 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= -80V(Min) Complement to type PMD10K80 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD11K100 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(Min) Complement to type PMD10K100 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAME... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD11K60 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= -60V(Min) Complement to type PMD10K60 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER... See More ⇒
Detailed specifications: PMBTA93, PMD10K100, PMD10K40, PMD10K60, PMD10K80, PMD11K100, PMD11K40, PMD11K60, TIP32C, PMD12K100, PMD12K40, PMD12K60, PMD12K80, PMD13K100, PMD13K40, PMD13K60, PMD13K80
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