PMD13K40 Datasheet, Equivalent, Cross Reference Search
Type Designator: PMD13K40
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 800
Noise Figure, dB: -
Package: TO3
PMD13K40 Transistor Equivalent Substitute - Cross-Reference Search
PMD13K40 Datasheet (PDF)
pmd13k80.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD13K80 DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) Complement to type PMD12K80 APPLICATIONSDesigned for general purpose amplifier and DC motor control applications. ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER VALUE U
pmd13k100.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD13K100 DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= -100V(Min) Complement to type PMD12K100 APPLICATIONSDesigned for general purpose amplifier and DC motor control applications. ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER VALU
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
