All Transistors. PMD13K40 Datasheet

 

PMD13K40 Datasheet and Replacement


   Type Designator: PMD13K40
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 800
   Noise Figure, dB: -
   Package: TO3
 

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PMD13K40 Datasheet (PDF)

 8.1. Size:199K  inchange semiconductor
 pmd13k80.pdf pdf_icon

PMD13K40

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD13K80 DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) Complement to type PMD12K80 APPLICATIONSDesigned for general purpose amplifier and DC motor control applications. ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER VALUE U

 8.2. Size:198K  inchange semiconductor
 pmd13k100.pdf pdf_icon

PMD13K40

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD13K100 DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= -100V(Min) Complement to type PMD12K100 APPLICATIONSDesigned for general purpose amplifier and DC motor control applications. ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER VALU

Datasheet: PMD11K40 , PMD11K60 , PMD11K80 , PMD12K100 , PMD12K40 , PMD12K60 , PMD12K80 , PMD13K100 , 2N2907 , PMD13K60 , PMD13K80 , PMD15K200 , PMD1600K , PMD1601K , PMD1602K , PMD1603K , PMD16K100 .

History: MMBT2907AR | DN100S | KSC1187R | RT1N234C | BDV64BG | 2SB472 | ESM3002

Keywords - PMD13K40 transistor datasheet

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