PN3645 Datasheet, Equivalent, Cross Reference Search

   Type Designator: PN3645
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 115
   Noise Figure, dB: -
   Package: TO92

PN3645 Transistor Equivalent Substitute - Cross-Reference Search

PN3645 Datasheet (PDF)

..1. Size:295K fairchild semi
pn3645.pdf

Discrete POWER & SignalTechnologiesPN3645C TO-92BEPNP General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 500 mA. Sourcedfrom Process 63. See PN2907A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsV Collector-Emitter Voltage 60 VCEO

9.1. Size:27K fairchild semi
pn3643.pdf

PN3643NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300mA.TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings* TA=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Voltage 5.0 VI

9.2. Size:295K fairchild semi
pn3644.pdf

Discrete POWER & SignalTechnologiesPN3644C TO-92BEPNP General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 500 mA. Sourcedfrom Process 63. See PN2907A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsV Collector-Emitter Voltage 45 VCEO

9.3. Size:27K fairchild semi
pn3642.pdf

PN3642NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300mA.TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings* TA=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 45 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Voltage 5.0 VI

9.4. Size:28K fairchild semi
pn3646.pdf

PN3646NPN Switching Transistor Sourced from process 22.TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings * Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 15 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base Voltage 5.0 VIC Collector Current - Continued 300 mATSTG Operating and Storage Junction Temperature Range -

9.5. Size:688K fairchild semi
pn3640 mmbt3640.pdf

PN3640 MMBT3640CETO-92CB BSOT-23EMark: 2JPNP Switching TransistorThis device is designed for very high speed saturated switchingat collector currents to 100 mA. Sourced from Process 65. SeePN4258 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 12 VVCBO Collector-Base Voltage

9.6. Size:67K central
2n3641 2n3642 2n3643 pn3641 pn3642 pn3643.pdf