2N5102 PDF and Equivalents Search

 

2N5102 Specs and Replacement

Type Designator: 2N5102

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 70 W

Maximum Collector-Base Voltage |Vcb|: 90 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 3.3 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 85 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO62

 2N5102 Substitution

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2N5102 datasheet

 9.1. Size:488K  central

2n5109.pdf pdf_icon

2N5102

2N5109 www.centralsemi.com SILICON DESCRIPTION NPN RF TRANSISTOR The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS (TA=25 C unless otherwise noted) SYMBOL UNITS Collector-Base Voltage VCBO 40 V Colle... See More ⇒

 9.2. Size:28K  advanced-semi

2n5108.pdf pdf_icon

2N5102

2N5108 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The 2N5108 is a Designed for General Purpose Class C Amplifier Applications Up to 1 GHz. PACKAGE STYLE TO-39 FEATURES GPE = 6.0 dB Typ. at 1.0 GHz FT = 1,500 MHz Typ. at 15 V/ 50 mA Hermetic TO-39 Package MAXIMUM RATINGS IC 400 mA VCB 55 V VCE 30 V PDISS 3.5 W @ TC = 25 OC TJ -65 to +200 OC 1 = Emitter 2... See More ⇒

 9.3. Size:47K  semicoa

2n5109.pdf pdf_icon

2N5102

Data Sheet No. 2N5109 Generic Part Number Type 2N5109 2N5109 Geometry 1007 Polarity NPN REF MIL-PRF-19500/453 Qual Level JAN - JANTXV Features VHF-UHF amplifier silicon transis- tor. Housed in TO-39 case. Also available in chip form using the 1007 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/398 which TO-39 Semicoa meets in all cases. M... See More ⇒

 9.4. Size:188K  inchange semiconductor

2n5108.pdf pdf_icon

2N5102

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N5108 DESCRIPTION High Current-Gain Bandwidth Product f = 1200MHz (Min) @V = 10V,I = 50mA T CE E Low Saturation Voltage Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose Class C amplifier applications up to 1 GHz ABS... See More ⇒

Detailed specifications: 2N5096, 2N5097, 2N5097S, 2N5098, 2N5099, 2N51, 2N5100, 2N5101, 2N2222, 2N5106, 2N5107, 2N5108, 2N5108A, 2N5109, 2N5109A, 2N5109B, 2N5109UB

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