PTB20007 Specs and Replacement

Type Designator: PTB20007

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 175 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 935 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: M169

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PTB20007 datasheet

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Detailed specifications: PT902, PT902-1, PT903, PT903-1, PTB20003, PTB20004, PTB20005, PTB20006, BC556, PTB20008, PTB20009, PTB20011, PTB20017, PTB20020, PTB20030, PTB20031, PTB20038

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