PTB20011 Specs and Replacement

Type Designator: PTB20011

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 145 W

Maximum Collector-Base Voltage |Vcb|: 65 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 9 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 470 MHz

Collector Capacitance (Cc): 36 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: M156A

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PTB20011 datasheet

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Detailed specifications: PT903-1, PTB20003, PTB20004, PTB20005, PTB20006, PTB20007, PTB20008, PTB20009, 2SC2383, PTB20017, PTB20020, PTB20030, PTB20031, PTB20038, PTB20046, PTB20050, PTB20051

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