PTB20050 Specs and Replacement

Type Designator: PTB20050

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 11.8 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.7 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1400 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: M118

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PTB20050 datasheet

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Detailed specifications: PTB20009, PTB20011, PTB20017, PTB20020, PTB20030, PTB20031, PTB20038, PTB20046, S9018, PTB20051, PTB20052, PTB20053, PTB20060, PTB20062, PTB20071, PTB20074, PTB20077

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