PTB20101 Specs and Replacement

Type Designator: PTB20101

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 330 W

Maximum Collector-Base Voltage |Vcb|: 65 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 470 MHz

Collector Capacitance (Cc): 5 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: 20224

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PTB20101 datasheet

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Detailed specifications: PTB20074, PTB20077, PTB20078, PTB20081, PTB20082, PTB20091, PTB20095, PTB20097, BD139, PTB20105, PTB20110, PTB20111, PTB20125, PTB20134, PTB20135, PTB20141, PTB20144

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