PTB20135 Specs and Replacement

Type Designator: PTB20135

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 165 W

Maximum Collector-Base Voltage |Vcb|: 65 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 925 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: 20216

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PTB20135 datasheet

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Detailed specifications: PTB20095, PTB20097, PTB20101, PTB20105, PTB20110, PTB20111, PTB20125, PTB20134, 2N5401, PTB20141, PTB20144, PTB20145, PTB20146, PTB20147, PTB20148, PTB20151, PTB20152

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