PTB20148 Specs and Replacement

Type Designator: PTB20148

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 145 W

Maximum Collector-Base Voltage |Vcb|: 65 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 925 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: M169

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PTB20148 datasheet

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Detailed specifications: PTB20125, PTB20134, PTB20135, PTB20141, PTB20144, PTB20145, PTB20146, PTB20147, S8050, PTB20151, PTB20152, PTB20156, PTB20157, PTB20159, PTB20162, PTB20165, PTB20166

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