PTB20162 Specs and Replacement
Type Designator: PTB20162
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 470 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: M169A
PTB20162 Substitution
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PTB20162 datasheet
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Detailed specifications: PTB20146, PTB20147, PTB20148, PTB20151, PTB20152, PTB20156, PTB20157, PTB20159, TIP3055, PTB20165, PTB20166, PTB20167, PTB20169, PTB20170, PTB20171, PTB20173, PTB20174
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