PTB20166 Specs and Replacement
Type Designator: PTB20166
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 48 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 675 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: 20209
PTB20166 Substitution
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PTB20166 datasheet
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Detailed specifications: PTB20148, PTB20151, PTB20152, PTB20156, PTB20157, PTB20159, PTB20162, PTB20165, BC557, PTB20167, PTB20169, PTB20170, PTB20171, PTB20173, PTB20174, PTB20175, PTB20176
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