PTB20169 Datasheet and Replacement

   Type Designator: PTB20169
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 33 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 2.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 915 MHz
   Collector Capacitance (Cc): 60 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: 20227
     - BJT ⓘ Cross-Reference Search