All Transistors. 2N5109 Datasheet

 

2N5109 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N5109

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 2.5 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.4 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 1200 MHz

Collector Capacitance (Cc): 3.5 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO39

2N5109 Transistor Equivalent Substitute - Cross-Reference Search

 

2N5109 Datasheet (PDF)

..1. 2n5109.pdf Size:488K _central

2N5109
2N5109

2N5109www.centralsemi.comSILICONDESCRIPTION:NPN RF TRANSISTORThe CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications.MARKING: FULL PART NUMBERTO-39 CASEMAXIMUM RATINGS: (TA=25C unless otherwise noted) SYMBOL UNITSCollector-Base Voltage VCBO 40 VColle

..2. 2n5109.pdf Size:47K _semicoa

2N5109
2N5109

Data Sheet No. 2N5109Generic Part Number:Type 2N51092N5109Geometry 1007Polarity NPNREF: MIL-PRF-19500/453Qual Level: JAN - JANTXVFeatures: VHF-UHF amplifier silicon transis-tor. Housed in TO-39 case. Also available in chip form usingthe 1007 chip geometry. The Min and Max limits shown areper MIL-PRF-19500/398 whichTO-39Semicoa meets in all cases.M

..3. 2n5109.pdf Size:187K _inchange_semiconductor

2N5109
2N5109

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N5109DESCRIPTIONHigh Current-Gain Bandwidth Product: f = 1200MHz (Min) @V = 10V,I = 50mAT CE ELow Saturation VoltageGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose Class C amplifier applicationsup to 1 GHzABS

9.1. 2n5108.pdf Size:28K _advanced-semi

2N5109

2N5108NPN SILICON HIGH FREQUENCY TRANSISTORDESCRIPTION:The 2N5108 is a Designed forGeneral Purpose Class C AmplifierApplications Up to 1 GHz.PACKAGE STYLE TO-39FEATURES: GPE = 6.0 dB Typ. at 1.0 GHz FT = 1,500 MHz Typ. at 15 V/ 50 mA Hermetic TO-39 PackageMAXIMUM RATINGSIC 400 mAVCB55 VVCE30 VPDISS3.5 W @ TC = 25 OCTJ-65 to +200 OC1 = Emitter 2

9.2. 2n5108.pdf Size:188K _inchange_semiconductor

2N5109
2N5109

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N5108DESCRIPTIONHigh Current-Gain Bandwidth Product: f = 1200MHz (Min) @V = 10V,I = 50mAT CE ELow Saturation VoltageGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose Class C amplifier applicationsup to 1 GHzABS

Datasheet: 2N51 , 2N5100 , 2N5101 , 2N5102 , 2N5106 , 2N5107 , 2N5108 , 2N5108A , A1015 , 2N5109A , 2N5109B , 2N5109UB , 2N511 , 2N5110 , 2N5111 , 2N5112 , 2N5113 .

 

 
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