PTB20173 Specs and Replacement

Type Designator: PTB20173

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 260 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1400 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: 20223

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PTB20173 datasheet

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Detailed specifications: PTB20159, PTB20162, PTB20165, PTB20166, PTB20167, PTB20169, PTB20170, PTB20171, TIP31C, PTB20174, PTB20175, PTB20176, PTB20177, PTB20179, PTB20181, PTB20183, PTB20187

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