2N511 Datasheet and Replacement
Type Designator: 2N511
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 30 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
2N511 Substitution
2N511 Datasheet (PDF)
2n5114 2n5115 2n5116.pdf

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n5114 2n5115 2n5116.pdf

P-Channel JFET SwitchCORPORATION2N5114 2N5116GENERAL DESCRIPTION ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise noted)AIdeal for inverting switching or "Virtual Gnd" switching intoinverting input of Op. Amp. No driver is required and 10VAC Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 30Vsignals can be handled using only +5V logic (TTL or CMOS). G
mx2n5114 mx2n5115 mx2n5116.pdf

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL J-FET Equivalent To MIL-PRF-19500/476 DEVICES LEVELS 2N5114 MQ = JAN Equivalent 2N5115 MX = JANTX Equivalent 2N5116 MV = JANTXV EquivalentABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test C
Datasheet: 2N5106 , 2N5107 , 2N5108 , 2N5108A , 2N5109 , 2N5109A , 2N5109B , 2N5109UB , D882 , 2N5110 , 2N5111 , 2N5112 , 2N5113 , 2N5117 , 2N5118 , 2N5119 , 2N511A .
History: 2N1693 | 2SC5446 | H732TM | MMBT3906HE3 | CV7676 | 3CD42 | BCP56-10HE3
Keywords - 2N511 transistor datasheet
2N511 cross reference
2N511 equivalent finder
2N511 lookup
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History: 2N1693 | 2SC5446 | H732TM | MMBT3906HE3 | CV7676 | 3CD42 | BCP56-10HE3



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