R8552 Specs and Replacement
Type Designator: R8552
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
R8552 Substitution
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R8552 datasheet
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Detailed specifications: R7360, R7887, R8066, R8070, R8118, R8224, R8259, R8305, BC547B, R8556, R8647, R8915, R8966, R9006, RCA1000, RCA1001, RCA120
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