2N5113 Datasheet and Replacement
Type Designator: 2N5113
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 1 MHz
Collector Capacitance (Cc): 500 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO59
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2N5113 Datasheet (PDF)
2n5114 2n5115 2n5116.pdf

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n5114 2n5115 2n5116.pdf

P-Channel JFET SwitchCORPORATION2N5114 2N5116GENERAL DESCRIPTION ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise noted)AIdeal for inverting switching or "Virtual Gnd" switching intoinverting input of Op. Amp. No driver is required and 10VAC Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 30Vsignals can be handled using only +5V logic (TTL or CMOS). G
mx2n5114 mx2n5115 mx2n5116.pdf

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL J-FET Equivalent To MIL-PRF-19500/476 DEVICES LEVELS 2N5114 MQ = JAN Equivalent 2N5115 MX = JANTX Equivalent 2N5116 MV = JANTXV EquivalentABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test C
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N2976 | 2N3682 | 2N459 | 2N5828A | 2N2134 | 2N1265-5 | BSY40
Keywords - 2N5113 transistor datasheet
2N5113 cross reference
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History: 2N2976 | 2N3682 | 2N459 | 2N5828A | 2N2134 | 2N1265-5 | BSY40



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