2N5129 Specs and Replacement
Type Designator: 2N5129
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 35
Package: TO106
2N5129 Substitution
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2N5129 datasheet
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Detailed specifications: 2N5121 , 2N5122 , 2N5123 , 2N5124 , 2N5125 , 2N5126 , 2N5127 , 2N5128 , S9014 , 2N512A , 2N512B , 2N513 , 2N5130 , 2N5131 , 2N5132 , 2N5133 , 2N5134 .
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Keywords - 2N5129 pdf specs
2N5129 cross reference
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History: BSP32
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