RT5402 Specs and Replacement
Type Designator: RT5402
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.33 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 140 °C
Electrical Characteristics
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO98-2
RT5402 Substitution
- BJT ⓘ Cross-Reference Search
RT5402 datasheet
START540 NPN Silicon RF Transistor LOW NOISE FIGURE NFmin = 0.9dB @ 1.8GHz, 5mA, 2V HIGH OUTPUT IP3 = 24dBm @ 1.8GHz, 20mA, 2V GOOD RUGGEDNESS BVceo = 4.5V TRANSITION FREQUENCY 45GHz ULTRA MINIATURE SOT343 PACKAGE SOT343 (SC70) ORDER CODE BRANDING START540TR 540 DESCRIPTION APPLICATIONS The START540 is a member of the START family that provide the market w... See More ⇒
Detailed specifications: RT4761, RT484, RT497M, RT498M, RT5152, RT5202, RT5207, RT5230, 431, RT5418, RT656M, RT657M, RT679M, RT69221, RT696M, RT697M, RT699AM
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