RT656M Specs and Replacement
Type Designator: RT656M
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO46
RT656M Substitution
- BJT ⓘ Cross-Reference Search
RT656M datasheet
NO PDF data!
Detailed specifications: RT497M, RT498M, RT5152, RT5202, RT5207, RT5230, RT5402, RT5418, TIP32C, RT657M, RT679M, RT69221, RT696M, RT697M, RT699AM, RT699M, RT717M
Keywords - RT656M pdf specs
RT656M cross reference
RT656M equivalent finder
RT656M pdf lookup
RT656M substitution
RT656M replacement
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P
Popular searches
a970 | d2390 transistor | 2n5087 equivalent | tip147 datasheet | 2n4124 | mj15022 | toshiba c5198 | irf520n datasheet
