2N5132 Specs and Replacement
Type Designator: 2N5132
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO106
2N5132 Substitution
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2N5132 datasheet
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Detailed specifications: 2N5127, 2N5128, 2N5129, 2N512A, 2N512B, 2N513, 2N5130, 2N5131, 2SC1815, 2N5133, 2N5134, 2N5135, 2N5136, 2N5137, 2N5138, 2N5139, 2N513A
Keywords - 2N5132 pdf specs
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History: BDT41 | ZTX413 | 2SB1122S | 2SB1404 | ST2N2907 | 2SB1122R | ST2N2907A
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