S5327E Specs and Replacement
Type Designator: S5327E
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 1000 MHz
Collector Capacitance (Cc): 1.5 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO72
S5327E Substitution
- BJT ⓘ Cross-Reference Search
S5327E datasheet
NO PDF data!
Detailed specifications: S2824, S2935, S2985, S2989, S2998, S416T, S483T, S518T, 2SC5200, S601T, S627T, S628T, S629T, S630T, S637T, S662T, S671T
Keywords - S5327E pdf specs
S5327E cross reference
S5327E equivalent finder
S5327E pdf lookup
S5327E substitution
S5327E replacement
