All Transistors. SC108C Datasheet

 

SC108C Datasheet and Replacement


   Type Designator: SC108C
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 165 MHz
   Forward Current Transfer Ratio (hFE), MIN: 420
   Noise Figure, dB: -
   Package: X13
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SC108C Datasheet (PDF)

 9.1. Size:42K  toshiba
 2sc108a 2sc109a.pdf pdf_icon

SC108C

 9.2. Size:154K  jmnic
 2sc1080.pdf pdf_icon

SC108C

JMnic Product SpecificationSilicon NPN Power Transistors 2SC1079 2SC1080 DESCRIPTION With TO-3 package Complement to type 2SA679/680 High power dissipation APPLICATIONS For audio power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMET

 9.3. Size:122K  inchange semiconductor
 2sc1079 2sc1080.pdf pdf_icon

SC108C

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1079 2SC1080 DESCRIPTION With TO-3 package Complement to type 2SA679/680 High power dissipation APPLICATIONS For audio power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=

 9.4. Size:182K  inchange semiconductor
 2sc1080.pdf pdf_icon

SC108C

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1080DESCRIPTIONWith TO-3 PackageHigh power dissipation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 110 VCBO

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Keywords - SC108C transistor datasheet

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