All Transistors. SC158VI Datasheet

 

SC158VI Datasheet, Equivalent, Cross Reference Search


   Type Designator: SC158VI
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 75 MHz
   Forward Current Transfer Ratio (hFE), MIN: 75
   Noise Figure, dB: -
   Package: X13

 SC158VI Transistor Equivalent Substitute - Cross-Reference Search

   

SC158VI Datasheet (PDF)

 9.1. Size:144K  no
2sc1583.pdf

SC158VI SC158VI

 9.2. Size:177K  inchange semiconductor
2sc1580.pdf

SC158VI SC158VI

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1580DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

 9.3. Size:177K  inchange semiconductor
2sc1586.pdf

SC158VI SC158VI

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1586DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

 9.4. Size:177K  inchange semiconductor
2sc1585.pdf

SC158VI SC158VI

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1585DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

 9.5. Size:208K  inchange semiconductor
2sc1584.pdf

SC158VI SC158VI

isc Silicon NPN PowerTransistor 2SC1584DESCRIPTIONHigh Power Dissipation-: P = 150W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOComplement to Type 2SA907Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for amplifier and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
Back to Top