SD1893 Specs and Replacement
Type Designator: SD1893
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: LCC2
SD1893 Substitution
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SD1893 datasheet
SD1893-03 RF & MICROWAVE TRANSISTORS 1.6 GHZ SATCOM APPLICATIONS .1.65 GHz .28 VOLTS .OVERLAY DIE GEOMETRY .GOLD METALLIZATION .HIGH RELIABILITY AND RUGGEDNESS .P 10 W MIN. WITH 11.0 dB GAIN = OUT .COMMON BASE .230 2LFL (M151) hermetically sealed ORDER CODE BRANDING SD1893-03 1893-3 PIN CONNECTION DESCRIPTION The SD1893-03 is a 28 V silicon NPN planar tran- sistor designed fo... See More ⇒
Power Transistors 2SD1893 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm Complementary to 2SB1253 15.0 0.3 5.0 0.2 11.0 0.2 3.2 Features Optimum for 40W HiFi output 3.2 0.1 High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat) ... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD1893 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = 5A FE C Low-Collector Saturation Voltage- V = 2.5V(Max.)@I = 5A CE(sat) C Complement to Type 2SB1253 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒
SD1898 RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS .1.65 GHz .28 VOLTS .EFFICIENCY 40% MIN. .CLASS C OPERATION .COMMON BASE .P 32 W MIN. WITH 9 dB GAIN = OUT .400 SQ. 2LFL (M186) epoxy sealed ORDER CODE BRANDING SD1898 1898 PIN CONNECTION DESCRIPTION The SD1898 is a 28 V Class C silicon NPN tran- sistor designed for INMARSAT and other 1.65 GHz SATCOM applications. ... See More ⇒
SD1894 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS CLASS C . 1.6 GHz . COMMON BASE . REFRACTORY/GOLD METALLIZATION . EFFICIENCY = 50% MIN. . POUT = 4.5 W MIN. WITH 10 dB GAIN . .250 x .320 2LFL (M170) epoxy sealed BRANDING ORDER CODE SD1894 SD1894 PIN CONNECTION DESCRIPTION The SD1894 is a common base silicon NPN bipolar device optimized for 1.6 GHz ... See More ⇒
SD1899 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS REFRACTORY/GOLD METALLIZATION . EFFICIENCY - 50% TYPICAL . P 30 W MIN. WITH 9.3 dB GAIN . OUT = .250 x .320 2LFL (M170) epoxy sealed ORDER CODE BRANDING SD1899 SD1899 PIN CONNECTION DESCRIPTION The SD1899 is a common base silicon NPN bipolar device optimized for 1.6 GHz SATCOM applica- tions. SD1899 offe... See More ⇒
SD1891-03 RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS .1.65 GHz .28 VOLTS .GOLD METALLIZED SYSTEM .POLYSILICON SITE BALLASTING .OVERLAY DIE GEOMETRY .HIGH RELIABILITY AND RUGGEDNESS .P 5.0 W MIN. WITH 14.0 dB GAIN OUT = .230 2LFL (M151) hermetically sealed ORDER CODE BRANDING SD1891-03 1891-03 PIN CONNECTION DESCRIPTION The SD1891-03 is a 28 V silicon NPN transistor ... See More ⇒
SD1897 RF & MICROWAVE TRANSISTORS 1.65 GHz SATCOM APPLICATIONS .1.65 GHz .28 VOLTS .CLASS C OPERATION .COMMON BASE .P 10 W MIN. WITH 11.0 dB GAIN OUT = .250 x .320 2LFL (M170) epoxy sealed ORDER CODE BRANDING SD1897 1897 PIN CONNECTION DESCRIPTION The SD1897 is a 28 V Class C silicon NPN tran- sistor designed for INMARSAT and other 1.65 GHz SATCOM applications. A gold metallize... See More ⇒
SD1895-03 RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS .1.65 GHz .28 VOLTS .OVERLAY DIE GEOMETRY .ALL GOLD METALLIZED SYSTEM .HIGH RELIABILITY AND RUGGEDNESS .COOMON BASE .P 15 W MIN. WITH 9.2 dB GAIN OUT = .250 x .320 2LFL (M170) epoxy sealed ORDER CODE BRANDING SD1895-03 SD1895-3 PIN CONNECTION DESCRIPTION The SD1895-03 is a 28 V silicon NPN planar tran- sistor des... See More ⇒
2SD1897 Transistors Transistors 2SD1757K (96-768-D91) (94S-314-D95) 317 ... See More ⇒
2sd1898 2sd1733 2sd1768s 2sd1863.pdf 
Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features Dimensions (Unit mm) 1) High VCEO, VCEO=80V 2SD1898 2) High IC, IC=1A (DC) 4.5+0.2 -0.1 1.5 0.1 3) Good hFE linearity 1.6 0.1 4) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 2SB1241 / 2SB1181 0.4+0.1 -0.05 0.4 0.1 0.5 0.1 0.4 0.1 1.5 0.1 1.5 0.1 3.0 0.2 (1) Base RO... See More ⇒
2SD1898 / 2SD1733 Datasheet NPN 1.0A 80V Middle Power Transistor lOutline Collector MPT3 CPT3 Parameter Value VCEO 80V Base Collector IC 1.0A Emitter Base Emitter 2SD1898 2SD1733 lFeatures (SC-62) (SC-63) 1) Suitable for Middle Power Driver 2) Complementary PNP Types 2SB1260 / 2SB1181 3) Low VCE(sat) VCE(sat)= 0.4V Max. (IC/IB=500mA/20mA) 4... See More ⇒
2SD1898 Datasheet Middle Power Transistor (80V / 1A) lOutline l SOT-89 Parameter Value SC-62 VCEO 80V IC 1A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, tipically VCE(sat)=150mV at IC/IB=500mA/50mA. 2)Complementary PNP Types 2SB1260 lApplication l LOW FREQUENCY OUTPUT AMPLIFIER lPackaging specifications l Ba... See More ⇒
2SD1898 Electrical Characteristics @ TA=25 C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V(BR)CBO IC=50 A, IE=0 Collector-Base Breakdown Voltage 100 V V(BR)CEO IC=1mA, IB=0 Collector-Emitter Breakdown Voltage 80 V V(BR)EBO IE=50 A, IC=0 Emitter-Base Breakdown Voltage 5 V ICBO VCB=80V, IE=0 Collector Cutoff Current 1 A IEBO VEB=4V, IC=0 Emitter Cu... See More ⇒
Power Transistors 2SD1892 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm 10.0 0.2 4.2 0.2 Complementary to 2SB1252 5.5 0.2 2.7 0.2 Features 3.1 0.1 Optimum for 35W HiFi output High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat) ... See More ⇒
Power Transistors 2SD1894 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm Complementary to 2SB1254 15.0 0.3 5.0 0.2 11.0 0.2 3.2 Features Optimum for 60W HiFi output 3.2 0.1 High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat) ... See More ⇒
Power Transistors 2SD1895 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm Complementary to 2SB1255 15.0 0.3 5.0 0.2 11.0 0.2 3.2 Features Optimum for 90W HiFi output 3.2 0.1 High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat) ... See More ⇒
UNISONIC TECHNOLOGIES CO., LTD 2SD1898 NPN SILICON TRANSISTOR POWER TRANSISTOR FEATURES *High VCEO= 80V *High IC= 1A (DC) *Good hFE linearity. *Low VCE(SAT) *Complements the 2SB1260. ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 2SD1898G-x-AA3-R SOT-223 B C E Tape Reel 2SD1898G-x-AB3-R SOT-89 B C E Tape Reel 2SD1898G-x-AE3-R SOT-23 ... See More ⇒
2SD1898 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product Description SOT-89 The 2SD1898 is designed for switching applications. Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 E 2.40 2.60 K 0.35 0.41 F 0.89 1.20 L 5 TYP. M 0.70 RE... See More ⇒
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SD1899 TRANSISTOR (NPN) TO-252-2L FEATURES 1. BASE Low VCE(sat) High Transition Frequency 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-... See More ⇒
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1898 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR High Breakdown Voltage and Current Excellent DC Current Gain Linearity 3. EMITTER Complement the 2SB1260 Low Collector-Emitter Saturation Voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol P... See More ⇒
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors 2SD1899-Z TRANSISTOR (NPN) TO-251-3L FEATURES High hFE Low VCE(sat) 1.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2.COLLECTOR Symbol Parameter Value Unit 3.EMITTER VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 ... See More ⇒
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1894 DESCRIPTION With TO-3PFa package Optimum for 60W HiFi output High foward current transfer ratio Low collector saturation voltage Complement to type 2SB1254 APPLICATIONS Power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMB... See More ⇒
Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD1895 DESCRIPTION With TO-3PFa package Optimum for 90W HiFi output High foward current transfer ratio hFE Low collector-emitter saturation voltage Complement to type 2SB1255 APPLICATIONS Power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ra... See More ⇒
Transys Electronics L I M I T E D TO-252 Plastic-Encapsulated Transistors 2SD1899-Z TRANSISTOR (NPN) TO-252 FEATURES Power dissipation 1. BASE PCM 2 W (Tamb=25 ) 2. COLLECTOR Collector current 3. EMITTER ICM 3 A 1 2 3 Collector-base voltage V(BR)CBO 60 V Operating and storage junction temperature range TJ, Tstg -55 to +150 ELECTRICAL CHARA... See More ⇒
2SD1898 TRANSISTOR (NPN) SOT-89-3L FEATURES High Breakdown Voltage and Current 1. BASE Excellent DC Current Gain Linearity 2. COLLECTOR Complement the 2SB1260 Low Collector-Emitter Saturation Voltage 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VE... See More ⇒
2SD1899 Transistor(NPN) 1.BASE TO-252-2L 2.COLLECTOR 3.EMITTER Features High hFE hFE=100 to 400 Low VCE(sat) VCE(sat)=0.25V MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Conti... See More ⇒
2SD1899-Z(NPN) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features High hFE hFE=100 to 400 Low VCE(sat) VCE(sat)=0.25V MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuou... See More ⇒
2SD1899 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead(Pb)-Free 1.BASE 3 2.COLLECTOR 2 3.EMITTER 1 MAXIMUM RATINGS (TA=25 unless otherwise noted) D-PAK(TO-252) Symbol Parameter Value Units Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V V Emitter-Base Voltage VEBO 7 Collector Current -Continuous IC 3 A Collector Power Dissipation PC 1 W Junction Tempera... See More ⇒
2SD1898 Epitaxial Planar NPN Transistors SOT-89 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER C (Ta=25 ) ABSOLUTE MAXIMUM RATINGS Rating Symbol Limits Unit Vdc Collector-Base Voltage V 100 CBO Vdc Collector-Emitter Voltage 80 VCEO Vdc Emitter-Base Voltage 5 VEBO IC A(DC) 1 Collector Current ICP 2 A (Pulse)* PC 0.5 W Collector Power Dissipation T , Tstg C Junction Tempera... See More ⇒
WILLAS 2SD1898 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT-89 FEATURES High Breakdown Voltage and Current 1. BASE Excellent DC Current Gain Linearity 2. COLLECTOR 3. EMITTER Low Collector-Emitter Saturation Voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Pb-Free package is available Symbol Parameter Value Unit RoHS product for pack... See More ⇒
2SD1899L(BR3DA1899LQF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features f T Low VCE(sat), high current and high fT, excellent linearity of hFE, fast switching time. / Applications... See More ⇒
SMD Type Transistors NPN Transistors 2SD1898 1.70 0.1 Features High VCEO, VCEO=80V High IC, IC=1A (DC) Low VCE (sat) 0.42 0.1 0.46 0.1 Complementary to 2SB1260 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage... See More ⇒
2SD1898 1.70 0.1 Features High VCEO, VCEO=80V High IC, IC=1A (DC) Low VCE (sat) 0.42 0.1 0.46 0.1 Complementary to 2SB1260 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 1 ... See More ⇒
2SD1898 NPN-General use transistor 1W 1.0A 32V 4 Applications Can be used for switching and amplifying in Can be used for switching and amplifying in 1 2 3 various electrical and electronic equipments electrical and electronic equipments SOT-89 SOT 1 Base 2 Collector 3 Collector 3 Emitter Absolute Maximum Ratings (Ta = 25 ) parameters symbol rating unit ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1891 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 90V(Min) (BR)CEO High DC Current Gain h = 5000(Min) @I = 3A FE C Low Collector Saturation Voltgae- V = 3.0V(Max.)@ I = 3A CE(sat) C Complement to Type 2SB1251 Minimum Lot-to-Lot variations for robust device performance and reliable operati... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1890 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High DC Current Gain h = 5000(Min) @I = 2A FE C Low Collector Saturation Voltgae- V = 2.5V(Max.)@ I = 2A CE(sat) C Complement to Type 2SB1250 Minimum Lot-to-Lot variations for robust device performance and reliable operati... See More ⇒
isc Silicon NPN Power Transistors 2SD1899-K DESCRIPTION Low Collector Saturation Voltage High Power Dissipation- P = 10W(Max)@T =25 C C Complement to Type 2SB1261-K Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio amplifier and switching, especially in hybrid integrated circuits. ABSOLUTE MAXIMUM... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1892 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain h = 5000(Min) @I = 4A FE C Low Collector Saturation Voltgae- V = 2.5V(Max.)@ I = 4A CE(sat) C Complement to Type 2SB1252 Minimum Lot-to-Lot variations for robust device performance and reliable operat... See More ⇒
isc Silicon NPN Power Transistor 2SD1897 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 3A CE(sat) C High Collector Power Dissipation Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD1894 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = 6A FE C Low-Collector Saturation Voltage- V = 2.5V(Max.)@I = 6A CE(sat) C Complement to Type 2SB1254 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒
isc Silicon NPN Power Transistor 2SD1899 DESCRIPTION Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High transition frequency applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V ... See More ⇒
isc Silicon NPN Power Transistor 2SD1896 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 3A CE(sat) C High Collector Power Dissipation Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD1895 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = 7A FE C Low-Collector Saturation Voltage- V = 2.5V(Max.)@I = 7A CE(sat) C Complement to Type 2SB1255 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒
isc Silicon NPN Power Transistor 2SD1899-Z DESCRIPTION Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High transition frequency applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V... See More ⇒
Detailed specifications: SC258B, SC258VI, SC259, SC259A, SC259B, SC4010, SC4244, SD109, BC556, SD1893F, SD2222A, SD2222AF, SD2857, SD2857F, SD2904A, SD2904AF, SD2907A
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