SD1893 Datasheet and Replacement

SD1893-03RF & MICROWAVE TRANSISTORS1.6 GHZ SATCOM APPLICATIONS.1.65 GHz.28 VOLTS.OVERLAY DIE GEOMETRY.GOLD METALLIZATION.HIGH RELIABILITY AND RUGGEDNESS.P 10 W MIN. WITH 11.0 dB GAIN=OUT.COMMON BASE.230 2LFL (M151)hermetically sealedORDER CODE BRANDINGSD1893-03 1893-3PIN CONNECTIONDESCRIPTIONThe SD1893-03 is a 28 V silicon NPN planar tran-sistor designed fo

Power Transistors2SD1893Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mmComplementary to 2SB125315.0 0.3 5.0 0.211.0 0.2 3.2FeaturesOptimum for 40W HiFi output 3.2 0.1High foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

isc Silicon NPN Darlington Power Transistor 2SD1893DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = 5AFE CLow-Collector Saturation Voltage-: V = 2.5V(Max.)@I = 5ACE(sat) CComplement to Type 2SB1253Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T

SD1898RF & MICROWAVE TRANSISTORS1.6 GHz SATCOM APPLICATIONS.1.65 GHz.28 VOLTS.EFFICIENCY 40% MIN..CLASS C OPERATION.COMMON BASE.P 32 W MIN. WITH 9 dB GAIN=OUT.400 SQ. 2LFL (M186)epoxy sealedORDER CODE BRANDINGSD1898 1898PIN CONNECTIONDESCRIPTIONThe SD1898 is a 28 V Class C silicon NPN tran-sistor designed for INMARSAT and other 1.65 GHzSATCOM applications.

SD1894RF & MICROWAVE TRANSISTORSSATELLITE COMMUNICATIONS APPLICATIONSCLASS C.1.6 GHz.COMMON BASE.REFRACTORY/GOLD METALLIZATION.EFFICIENCY = 50% MIN..POUT = 4.5 W MIN. WITH 10 dB GAIN..250 x .320 2LFL (M170)epoxy sealedBRANDINGORDER CODESD1894SD1894PIN CONNECTIONDESCRIPTIONThe SD1894 is a common base silicon NPN bipolardevice optimized for 1.6 GHz

SD1899RF & MICROWAVE TRANSISTORSSATELLITE COMMUNICATIONS APPLICATIONSREFRACTORY/GOLD METALLIZATION.EFFICIENCY - 50% TYPICAL.P 30 W MIN. WITH 9.3 dB GAIN. OUT =.250 x .320 2LFL (M170)epoxy sealedORDER CODEBRANDINGSD1899SD1899PIN CONNECTIONDESCRIPTIONThe SD1899 is a common base silicon NPN bipolardevice optimized for 1.6 GHz SATCOM applica-tions.SD1899 offe

SD1891-03RF & MICROWAVE TRANSISTORS1.6 GHz SATCOM APPLICATIONS.1.65 GHz.28 VOLTS.GOLD METALLIZED SYSTEM.POLYSILICON SITE BALLASTING.OVERLAY DIE GEOMETRY.HIGH RELIABILITY AND RUGGEDNESS.P 5.0 W MIN. WITH 14.0 dB GAINOUT =.230 2LFL (M151)hermetically sealedORDER CODE BRANDINGSD1891-03 1891-03PIN CONNECTIONDESCRIPTIONThe SD1891-03 is a 28 V silicon NPN transistor

SD1897RF & MICROWAVE TRANSISTORS1.65 GHz SATCOM APPLICATIONS.1.65 GHz.28 VOLTS.CLASS C OPERATION.COMMON BASE.P 10 W MIN. WITH 11.0 dB GAINOUT =.250 x .320 2LFL (M170)epoxy sealedORDER CODE BRANDINGSD1897 1897PIN CONNECTIONDESCRIPTIONThe SD1897 is a 28 V Class C silicon NPN tran-sistor designed for INMARSAT and other 1.65 GHzSATCOM applications. A gold metallize

SD1895-03RF & MICROWAVE TRANSISTORS1.6 GHz SATCOM APPLICATIONS.1.65 GHz.28 VOLTS.OVERLAY DIE GEOMETRY.ALL GOLD METALLIZED SYSTEM.HIGH RELIABILITY AND RUGGEDNESS.COOMON BASE.P 15 W MIN. WITH 9.2 dB GAINOUT =.250 x .320 2LFL (M170)epoxy sealedORDER CODE BRANDINGSD1895-03 SD1895-3PIN CONNECTIONDESCRIPTIONThe SD1895-03 is a 28 V silicon NPN planar tran-sistor des

2SD1897TransistorsTransistors2SD1757K(96-768-D91)(94S-314-D95)317

Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features Dimensions (Unit : mm) 1) High VCEO, VCEO=80V 2SD18982) High IC, IC=1A (DC) 4.5+0.2-0.11.50.13) Good hFE linearity 1.60.14) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 2SB1241 / 2SB1181 0.4+0.1-0.050.40.1 0.50.1 0.40.11.50.1 1.50.13.00.2(1) BaseRO

2SD1898 / 2SD1733Datasheet NPN 1.0A 80V Middle Power TransistorlOutlineCollector MPT3 CPT3Parameter ValueVCEO80VBase Collector IC1.0AEmitter Base Emitter 2SD1898 2SD1733 lFeatures(SC-62) (SC-63) 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1260 / 2SB11813) Low VCE(sat)VCE(sat)= 0.4V Max. (IC/IB=500mA/20mA)4

2SD1898DatasheetMiddle Power Transistor (80V / 1A)lOutlinel SOT-89 Parameter Value SC-62 VCEO80VIC1AMPT3lFeatures lInner circuitl l1)Low saturation voltage, tipicallyVCE(sat)=150mV at IC/IB=500mA/50mA.2)Complementary PNP Types : 2SB1260lApplicationlLOW FREQUENCY OUTPUT AMPLIFIERlPackaging specificationslBa

2SD1898Electrical Characteristics @ TA=25C Unless Otherwise SpecifiedParameter Symbol Min Typ Max Units ConditionsV(BR)CBO IC=50A, IE=0Collector-Base Breakdown Voltage 100 VV(BR)CEO IC=1mA, IB=0Collector-Emitter Breakdown Voltage 80 VV(BR)EBO IE=50A, IC=0Emitter-Base Breakdown Voltage 5 VICBO VCB=80V, IE=0Collector Cutoff Current 1 AIEBO VEB=4V, IC=0Emitter Cu

Power Transistors2SD1892Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm10.0 0.2 4.2 0.2Complementary to 2SB12525.5 0.2 2.7 0.2Features 3.1 0.1Optimum for 35W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

Power Transistors2SD1894Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mmComplementary to 2SB125415.0 0.3 5.0 0.211.0 0.2 3.2FeaturesOptimum for 60W HiFi output 3.2 0.1High foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

Power Transistors2SD1895Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mmComplementary to 2SB125515.0 0.3 5.0 0.211.0 0.2 3.2FeaturesOptimum for 90W HiFi output 3.2 0.1High foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

UNISONIC TECHNOLOGIES CO., LTD 2SD1898 NPN SILICON TRANSISTOR POWER TRANSISTOR FEATURES *High VCEO= 80V *High IC= 1A (DC) *Good hFE linearity. *Low VCE(SAT) *Complements the 2SB1260. ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 32SD1898G-x-AA3-R SOT-223 B C E Tape Reel2SD1898G-x-AB3-R SOT-89 B C E Tape Reel2SD1898G-x-AE3-R SOT-23

2SD1898NPN Silicon Elektronische BauelementeEpitaxial Planar TransistorRoHS Compliant ProductDescriptionSOT-89The 2SD1898 is designed for switching applications.Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 E 2.40 2.60 K 0.35 0.41 F 0.89 1.20 L 5 TYP. M 0.70 RE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SD1899 TRANSISTOR (NPN) TO-252-2L FEATURES 1. BASE Low VCE(sat) High Transition Frequency 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1898 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR High Breakdown Voltage and Current Excellent DC Current Gain Linearity 3. EMITTER Complement the 2SB1260 Low Collector-Emitter Saturation Voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol P

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors 2SD1899-Z TRANSISTOR (NPN) TO-251-3L FEATURES High hFE Low VCE(sat) 1.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2.COLLECTOR Symbol Parameter Value Unit 3.EMITTER VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SD1894 DESCRIPTION With TO-3PFa package Optimum for 60W HiFi output High foward current transfer ratio Low collector saturation voltage Complement to type 2SB1254 APPLICATIONS Power amplification PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMB

Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD1895 DESCRIPTION With TO-3PFa package Optimum for 90W HiFi output High foward current transfer ratio hFE Low collector-emitter saturation voltage Complement to type 2SB1255 APPLICATIONS Power amplification PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ra

Transys ElectronicsL I M I T E D TO-252 Plastic-Encapsulated Transistors 2SD1899-Z TRANSISTOR (NPN) TO-252 FEATURES Power dissipation 1. BASE PCM: 2 W (Tamb=25) 2. COLLECTOR Collector current 3. EMITTER ICM: 3 A 1 2 3 Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARA

2SD1898 TRANSISTOR (NPN)SOT-89-3L FEATURES High Breakdown Voltage and Current 1. BASE Excellent DC Current Gain Linearity 2. COLLECTOR Complement the 2SB1260 Low Collector-Emitter Saturation Voltage 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VE

2SD1899 Transistor(NPN)1.BASE TO-252-2L2.COLLECTOR 3.EMITTER Features High hFE hFE=100 to 400 Low VCE(sat) VCE(sat)=0.25V MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Conti

2SD1899-Z(NPN) TO-251/TO-252-2L TransistorTO-2511.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features High hFE hFE=100 to 400 Low VCE(sat) VCE(sat)=0.25V MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2LSymbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuou

2SD1899NPN PLASTIC ENCAPSULATE TRANSISTORSP b Lead(Pb)-Free1.BASE32.COLLECTOR23.EMITTER 1MAXIMUM RATINGS (TA=25 unless otherwise noted)D-PAK(TO-252)SymbolParameter Value UnitsCollector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 60VVEmitter-Base Voltage VEBO7Collector Current -Continuous IC 3 ACollector Power Dissipation PC 1 WJunction Tempera

2SD1898Epitaxial Planar NPN TransistorsSOT-89121. BASE32. COLLECTOR3. EMITTERC(Ta=25 )ABSOLUTE MAXIMUM RATINGSRating SymbolLimits UnitVdcCollector-Base VoltageV 100CBOVdcCollector-Emitter Voltage 80VCEOVdcEmitter-Base Voltage 5VEBOIC A(DC)1Collector CurrentICP 2 A (Pulse)*PC 0.5 WCollector Power DissipationT , TstgCJunction Tempera

WILLAS2SD1898 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT-89 FEATURES High Breakdown Voltage and Current 1. BASE Excellent DC Current Gain Linearity 2. COLLECTOR 3. EMITTER Low Collector-Emitter Saturation Voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Pb-Free package is available Symbol Parameter Value UnitRoHS product for pack

2SD1899L(BR3DA1899LQF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features f TLow VCE(sat), high current and high fT, excellent linearity of hFE, fast switching time. / Applications

SMD Type TransistorsNPN Transistors2SD18981.70 0.1 Features High VCEO, VCEO=80V High IC, IC=1A (DC) Low VCE (sat)0.42 0.10.46 0.1 Complementary to 2SB12601.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage

2SD18981.70 0.1 Features High VCEO, VCEO=80V High IC, IC=1A (DC) Low VCE (sat)0.42 0.10.46 0.1 Complementary to 2SB12601.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 120Collector - Emitter Voltage VCEO 80 VEmitter - Base Voltage VEBO 5Collector Current - Continuous IC 1

2SD1898NPN-General use transistor 1W 1.0A32V 4Applications Can be used for switching and amplifying inCan be used for switching and amplifying in 1 2 3various electrical and electronic equipmentselectrical and electronic equipments SOT-89 SOT1Base 2Collector 3Collector 3Emitter Absolute Maximum Ratings (Ta = 25) parameters symbol rating unit

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1891DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 90V(Min)(BR)CEOHigh DC Current Gain: h = 5000(Min) @I = 3AFE CLow Collector Saturation Voltgae-: V = 3.0V(Max.)@ I = 3ACE(sat) CComplement to Type 2SB1251Minimum Lot-to-Lot variations for robust deviceperformance and reliable operati

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1890DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current Gain: h = 5000(Min) @I = 2AFE CLow Collector Saturation Voltgae-: V = 2.5V(Max.)@ I = 2ACE(sat) CComplement to Type 2SB1250Minimum Lot-to-Lot variations for robust deviceperformance and reliable operati

isc Silicon NPN Power Transistors 2SD1899-KDESCRIPTIONLow Collector Saturation VoltageHigh Power Dissipation-: P = 10W(Max)@T =25C CComplement to Type 2SB1261-KMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio amplifier and switching,especially in hybrid integrated circuits.ABSOLUTE MAXIMUM

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1892DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain: h = 5000(Min) @I = 4AFE CLow Collector Saturation Voltgae-: V = 2.5V(Max.)@ I = 4ACE(sat) CComplement to Type 2SB1252Minimum Lot-to-Lot variations for robust deviceperformance and reliable operat

isc Silicon NPN Power Transistor 2SD1897DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max.)@ I = 3ACE(sat) CHigh Collector Power DissipationGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

isc Silicon NPN Darlington Power Transistor 2SD1894DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = 6AFE CLow-Collector Saturation Voltage-: V = 2.5V(Max.)@I = 6ACE(sat) CComplement to Type 2SB1254Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T

isc Silicon NPN Power Transistor 2SD1899DESCRIPTIONLow collector saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh transition frequency applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 60 V

isc Silicon NPN Power Transistor 2SD1896DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max.)@ I = 3ACE(sat) CHigh Collector Power DissipationGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

isc Silicon NPN Darlington Power Transistor 2SD1895DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = 7AFE CLow-Collector Saturation Voltage-: V = 2.5V(Max.)@I = 7ACE(sat) CComplement to Type 2SB1255Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T

isc Silicon NPN Power Transistor 2SD1899-ZDESCRIPTIONLow collector saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh transition frequency applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 60 V