SD2907AF Datasheet, Equivalent, Cross Reference Search
Type Designator: SD2907AF
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: LCC2
SD2907AF Transistor Equivalent Substitute - Cross-Reference Search
SD2907AF Datasheet (PDF)
sd2902.pdf
SD2902RF POWER TRANSISTORSHF/VHF/UHF N-CHANNEL MOSFETs GOLD METALLIZATION COMMON SOURCE CONFIGURATION 2 - 500 MHz 15 WATTS 28 VOLTS 12.5 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITYM113DESCRIPTION epoxy sealedThe SD2902 is a gold metallized N-Channel MOSORDER CODE BRANDINGfield-effect RF power transistor. It is intended for SD2902
sd2900.pdf
SD2900RF POWER TRANSISTORSHF/VHF/UHF N-CHANNEL MOSFETs GOLD METALLIZATION COMMON SOURCE CONFIGURATION 2 - 500 MHz 5 WATTS 28 VOLTS 13.5 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITYM113DESCRIPTION epoxy sealedThe SD2900 is a gold metallized N-Channel MOSORDER CODE BRANDINGfield-effect RF power transistor. It is intended for SD2900
sd2903.pdf
SD2903RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs GOLD METALLIZATION 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION,PUSH-PULL M229(epoxy sealed)DESCRIPTION ORDER CODE BRANDINGThe SD2903 is a gold metallized N-Channel MOS SD2903 SD2903field-effect RF power transistor.
sd2904.pdf
SD2904RF POWER TRANSISTORSHF/VHF/UHF N-CHANNEL MOSFETs GOLD METALLIZATION COMMON SOURCE CONFIGURATION 2 - 500 MHz 30 WATTS 28 VOLTS 9.5 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITYM113DESCRIPTION epoxy sealedThe SD2904 is a gold metallized N-Channel MOSORDER CODE BRANDINGfield-effect RF power transistor. It is intended for SD2904 S
2sd2908.pdf
Low VCE(sat) transistor(80V,0.7A) 2SD2908 FEATURES Pb Low VCE(sat). Lead-free Excellent DC current gain characteristics. Complements the 2SB1386 SOT-89ORDERING INFORMATION Type No. Marking Package Code 2SD2908 AHQ/AHR SOT-89 MAXIMUM RATING @ Ta=25 unless otherwise specifiedSymbol Parameter Value UnitsCollector-Base Voltage VCBO 50 VCollector-Emitter Voltag
2sd2901.pdf
isc Silicon NPN Power Transistor 2SD2901DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 900V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
