SDM4006 Datasheet, Equivalent, Cross Reference Search

   Type Designator: SDM4006
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 117 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO3

SDM4006 Transistor Equivalent Substitute - Cross-Reference Search

SDM4006 Datasheet (PDF)

9.1. Size:436K 1
asdm40n52e-r.pdf

ASDM40N5240V N-Channel MOSFETGeneral Features Product Summary Low On-ResistanceV 40 VDSS 100% avalanche tested4.2 R mDS(ON)-Typ Fast Switching SpeedI 52 A Excellent package for good heat dissipation DApplication DC/DC ConvertersPin1 On board power for server Synchronous rectificationAbsolute Maximum Ratings (T =25 unless otherwise s

9.2. Size:461K 1
asdm40n80q.pdf

ASDM40N80Q40V N-CHANNEL MOSFETFeaturesProduct Summary Low On-ResistanceV 40 V DSS Fast Switching Speed 100% avalanche tested R 3.5 mDS(ON)-Typ@VGS=10V Lead Free and Green DevicesI 80 A DAvailable (RoHS Compliant)Application DC/DC Converters On board power for server Synchronous rectificationtop view DFN5x6-8Absolute Maximum Ratings

9.3. Size:461K ascend
asdm40n80q.pdf