2N514B Specs and Replacement
Type Designator: 2N514B
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 30 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
2N514B Substitution
- BJT ⓘ Cross-Reference Search
2N514B datasheet
2N5148 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 2A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 ... See More ⇒
Detailed specifications: 2N5143, 2N5144, 2N5145, 2N5146, 2N5147, 2N5148, 2N5149, 2N514A, 2SB817, 2N515, 2N5150, 2N5151, 2N5151A, 2N5151S, 2N5152, 2N5152S, 2N5152SM
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