SE2001 Specs and Replacement
Type Designator: SE2001
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO106
SE2001 Substitution
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SE2001 datasheet
SE200100G N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent R with low gate DS(ON) V =200V DS charge. R =11m @V =10V DS(ON) GS High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configurations See Di... See More ⇒
KSE200 Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product fT=65MHz @ IC=100mA (Min.) Complement to KSE210 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V ... See More ⇒
KSE200 POWER TR CD-ROM(Edition.1.1) This Data Sheet is subject to change without notice. (C) 1994 Samsung Electronics Printed in Korea. Page 1 (KSE200) KSE200 POWER TR CD-ROM(Edition.1.1) This Data Sheet is subject to change without notice. (C) 1994 Samsung Electronics Printed in Korea. Page 2 (KSE200) ... See More ⇒
Detailed specifications: SDT9307, SDT9308, SDT9309, SE0566, SE1001, SE1002, SE1022, SE1730, BC558, SE2002, SE3001, SE3002, SE3005, SE4001, SE4002, SE4010, SE5006
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