SE6022 Datasheet and Replacement
Type Designator: SE6022
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.22 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO106
SE6022 Substitution
SE6022 Datasheet (PDF)
se6020b.pdf

SE6020BN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =60VDSVoltage and Current Improved Shoot-Through R =14m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurationsSe
se60210ga.pdf

Dec 2014 SE60210GA N-Channel Enhancement-Mode MOSFET Revision: A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent RDS(ON) with low gate VDS = 60V charge. RDS(ON) = 2.2m @ VGS=10V High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configurations
se6020db.pdf

SE6020DBN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =60VDSVoltage and Current Improved Shoot-Through R =24m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurationsS
Datasheet: SE5055 , SE5-0854 , SE5-567 , SE6001 , SE6002 , SE6010 , SE6020 , SE6021 , 2222A , SE6023 , SE6062 , SE6063 , SE6562 , SE6563 , SE7005 , SE7055 , SE7056 .
History: BF860
Keywords - SE6022 transistor datasheet
SE6022 cross reference
SE6022 equivalent finder
SE6022 lookup
SE6022 substitution
SE6022 replacement
History: BF860



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