SE8521 Specs and Replacement

Type Designator: SE8521

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO106

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SE8521 datasheet

 0.1. Size:588K  cn sino-ic

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SE8521

SE85210 N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =85V DS Voltage and Current Improved Shoot-Through R =3.0m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations S... See More ⇒

Detailed specifications: SE7056, SE8001, SE8002, SE8010, SE8041, SE8042, SE8510, SE8520, D882P, SE8541, SE8542, SE9300, SE9301, SE9302, SE9400, SE9401, SE9402

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