SF334 Specs and Replacement

Type Designator: SF334

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.025 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 0.4 pF

Forward Current Transfer Ratio (hFE), MIN: 67

Noise Figure, dB: -

Package: X13

 SF334 Substitution

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SF334 datasheet

 0.1. Size:536K  silikron

 ssf3341.pdf pdf_icon

SF334

SSF3341 Main Product Characteristics D VDSS -30V G RDS(on) 42m (typ.) S ID -4.2A Marking and pin SOT-23 Schematic diagram Assignme nt Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body ... See More ⇒

 0.2. Size:381K  silikron

 ssf3341l.pdf pdf_icon

SF334

SSF3341L D DESCRIPTION The SSF3341L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable G for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram VDS = -30V,ID = -4.2A RDS(ON) ... See More ⇒

Detailed specifications: SF195D, SF294, SF294B, SF295, SF295C, SF295D, SF310, SF314, A1015, SF334B, SF335, SF335C, SF335D, SF367, SFT106, SFT107, SFT108

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