SFT145 Datasheet, Equivalent, Cross Reference Search
Type Designator: SFT145
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.55 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 25 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
SFT145 Transistor Equivalent Substitute - Cross-Reference Search
SFT145 Datasheet (PDF)
sft1450.pdf
SFT1450Ordering number : ENA1743SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1450ApplicationsFeatures ON-resistance RDS(on)1=21m (typ) Input Capacitance Ciss=715pF(typ) 4.5V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-t
sft1452.pdf
Ordering number : EN9051BSFT1452N-Channel Power MOSFEThttp://onsemi.com250V, 3A, 2.4 , Single DPAK/IPAKFeatures ON-resistance RDS(on)=1.8 (typ.) Input Capacitance Ciss=210pF(typ.) 10V drive Halogen free compliance ESD Diode-Protected GateSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Sou
sft1423.pdf
SFT1423Ordering number : ENA1509SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1423ApplicationsFeatures Low ON-resistance. 4V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 500 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID 2 A
sft1440.pdf
SFT1440Ordering number : ENA1816SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1440ApplicationsFeatures ON-resistance RDS(on)=6.2 (typ.) Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 600 VGate-to-Source Voltage VGSS 30 VDrain Current (DC) ID
sft1446.pdf
SFT1446Ordering number : ENA1742SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1446ApplicationsFeatures ON-resistance RDS(on)1=39m (typ) Input Capacitance Ciss=750pF(typ) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-
sft1445.pdf
SFT1445Ordering number : ENA1897SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1445ApplicationsFeatures ON-resistance RDS(on)1=85m (typ.) Input Capacitance Ciss=1030pF(typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-
sft1443.pdf
SFT1443Ordering number : ENA1896SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1443ApplicationsFeatures ON-resistance RDS(on)1=180m (typ.) Input Capacitance Ciss=490pF(typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-
sft1431.pdf
SFT1431Ordering number : ENA1624SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1431ApplicationsFeatures Motor drive application. Low ON-resistance. 4V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 35 VGate-to-Source Voltage VGSS 20
sft1445.pdf
Ordering number : ENA1897ASFT1445N-Channel Power MOSFEThttp://onsemi.com100V, 17A, 111m , Single TP/TP-FAFeatures ON-resistance RDS(on)1=85m (typ.) Input Capacitance Ciss=1030pF(typ.) 4V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source
sft1443.pdf
Ordering number : ENA1896B SFT1443 Power MOSFET http://onsemi.com 100V, 225m, 9A, Single N-Channel Features Electrical Connection N-Channel High Speed Switching ESD Diode-Protected Gate 2,4 Low Gate Charge Pb-free, Halogen-free and RoHS Compliance 1Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Value Unit3V Drain to Sou
sft1443.pdf
SFT1443www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
