2N5153SM Datasheet and Replacement
Type Designator: 2N5153SM
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 560 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO252
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2N5153SM Datasheet (PDF)
2n5153smd.pdf

2N5153SMDDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar PNP Device. 2VCEO = 80V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0
2n5153smd05.pdf

2N5151SMD052N5153SMD05MECHANICAL DATAPNP BIPOLAR TRANSISTOR IN ADimensions in mm (inches)CERAMIC SURFACE MOUNTPACKAGE FOR HIGH-REL ANDSPACE APPLICATIONS DESCRIPTION !The 2N5151SMD05 and the 2N5153SMD05 aresilicon expitaxial planar PNP transistors in aCeramic S
2n5153hr.pdf

2N5153HRHi-Rel PNP bipolar transistor 80 V, 5 ADatasheet - production dataFeatures132Parameter ValueTO-257 VCEO 80 VTO-39 IC (max.) 5 A2hFE at 10 V -150 mA > 7013Operating temperature -65 C to +200 CrangeSMD.5 Hi-Rel PNP bipolar transistor Linear gain characteristicsFigure 1. Internal schematic diagram ESCC qualified European preferr
2n5151 2n5152 2n5153 2n5154.pdf

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N1461 | 2N5039 | 2N4958UB | 2N5238 | 2N537 | 2N1285 | 2SA1249
Keywords - 2N5153SM transistor datasheet
2N5153SM cross reference
2N5153SM equivalent finder
2N5153SM lookup
2N5153SM substitution
2N5153SM replacement
History: 2N1461 | 2N5039 | 2N4958UB | 2N5238 | 2N537 | 2N1285 | 2SA1249



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