All Transistors. SGS125 Datasheet

 

SGS125 Datasheet and Replacement


   Type Designator: SGS125
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 65 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO126
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SGS125 Datasheet (PDF)

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SGS125

SGS125SILICON PNP POWER DARLINGTON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODEAPPLICATION GENERAL PURPOSE SWITCHING DESCRIPTION 3The SGS125 is a silicon epitaxial-base PNP21transistor in monolithic Darlington configuration inSOT82 plastic package, intented for use in powerSOT-82linear and switching ap

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: RT2P01M | XC156 | CTP1732 | DTA114TMFHA | 2SC3489 | CP502 | 2SA713AS

Keywords - SGS125 transistor datasheet

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