SGS125 Specs and Replacement

Type Designator: SGS125

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 65 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: TO126

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SGS125 datasheet

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SGS125

SGS125 SILICON PNP POWER DARLINGTON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION GENERAL PURPOSE SWITCHING DESCRIPTION 3 The SGS125 is a silicon epitaxial-base PNP 2 1 transistor in monolithic Darlington configuration in SOT82 plastic package, intented for use in power SOT-82 linear and switching ap... See More ⇒

Detailed specifications: SGS111, SGS112, SGS115, SGS116, SGS117, SGS120, SGS121, SGS122, A1941, SGS126, SGS127, SGS130, SGS131, SGS132, SGS135, SGS136, SGS137

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