SGS125 Datasheet and Replacement
Type Designator: SGS125
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 65 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO126
SGS125 Substitution
SGS125 Datasheet (PDF)
sgs125.pdf

SGS125SILICON PNP POWER DARLINGTON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODEAPPLICATION GENERAL PURPOSE SWITCHING DESCRIPTION 3The SGS125 is a silicon epitaxial-base PNP21transistor in monolithic Darlington configuration inSOT82 plastic package, intented for use in powerSOT-82linear and switching ap
Datasheet: SGS111 , SGS112 , SGS115 , SGS116 , SGS117 , SGS120 , SGS121 , SGS122 , BC557 , SGS126 , SGS127 , SGS130 , SGS131 , SGS132 , SGS135 , SGS136 , SGS137 .
History: BUV46FI
Keywords - SGS125 transistor datasheet
SGS125 cross reference
SGS125 equivalent finder
SGS125 lookup
SGS125 substitution
SGS125 replacement
History: BUV46FI



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