SGS125 Datasheet, Equivalent, Cross Reference Search
Type Designator: SGS125
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 65 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO126
SGS125 Transistor Equivalent Substitute - Cross-Reference Search
SGS125 Datasheet (PDF)
..1. Size:64K st
sgs125.pdf
sgs125.pdf
SGS125SILICON PNP POWER DARLINGTON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODEAPPLICATION GENERAL PURPOSE SWITCHING DESCRIPTION 3The SGS125 is a silicon epitaxial-base PNP21transistor in monolithic Darlington configuration inSOT82 plastic package, intented for use in powerSOT-82linear and switching ap
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
