SGS131 Datasheet and Replacement
Type Designator: SGS131
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 65 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO126
SGS131 Substitution
SGS131 Datasheet (PDF)
sgs13n60ufd.pdf

April 2001 IGBTSGS13N60UFDUltra-Fast IGBTGeneral Description FeaturesFairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 6.5AThe UFD series is designed for applications such as motor High input impedancecontrol and general inverters whe
sgs13n60uf.pdf

April 2001 IGBTSGS13N60UFUltra-Fast IGBTGeneral Description FeaturesFairchild's UF series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 6.5AThe UF series is designed for applications such as motor High input impedancecontrol and general inverters where
Datasheet: SGS117 , SGS120 , SGS121 , SGS122 , SGS125 , SGS126 , SGS127 , SGS130 , S8050 , SGS132 , SGS135 , SGS136 , SGS137 , SGS3055 , SGS6386 , SGS6387 , SGS6388 .
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