All Transistors. SGS131 Datasheet

 

SGS131 Datasheet, Equivalent, Cross Reference Search


   Type Designator: SGS131
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 65 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO126

 SGS131 Transistor Equivalent Substitute - Cross-Reference Search

   

SGS131 Datasheet (PDF)

 9.1. Size:643K  1
sgs13n60ufd.pdf

SGS131
SGS131

April 2001 IGBTSGS13N60UFDUltra-Fast IGBTGeneral Description FeaturesFairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 6.5AThe UFD series is designed for applications such as motor High input impedancecontrol and general inverters whe

 9.2. Size:584K  1
sgs13n60uf.pdf

SGS131
SGS131

April 2001 IGBTSGS13N60UFUltra-Fast IGBTGeneral Description FeaturesFairchild's UF series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 6.5AThe UF series is designed for applications such as motor High input impedancecontrol and general inverters where

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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