SGS137 Specs and Replacement

Type Designator: SGS137

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 65 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: TO126

 SGS137 Substitution

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SGS137 datasheet

 9.1. Size:643K  1

 sgs13n60ufd.pdf pdf_icon

SGS137

April 2001 IGBT SGS13N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 6.5A The UFD series is designed for applications such as motor High input impedance control and general inverters whe... See More ⇒

 9.2. Size:584K  1

 sgs13n60uf.pdf pdf_icon

SGS137

April 2001 IGBT SGS13N60UF Ultra-Fast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 6.5A The UF series is designed for applications such as motor High input impedance control and general inverters where ... See More ⇒

Detailed specifications: SGS125, SGS126, SGS127, SGS130, SGS131, SGS132, SGS135, SGS136, BC327, SGS3055, SGS6386, SGS6387, SGS6388, SGS911, SGS912, SGSD00020, SGSD100

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