All Transistors. SGS137 Datasheet

 

SGS137 Datasheet and Replacement


   Type Designator: SGS137
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 65 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO126
 

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SGS137 Datasheet (PDF)

 9.1. Size:643K  1
 sgs13n60ufd.pdf pdf_icon

SGS137

April 2001 IGBTSGS13N60UFDUltra-Fast IGBTGeneral Description FeaturesFairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 6.5AThe UFD series is designed for applications such as motor High input impedancecontrol and general inverters whe

 9.2. Size:584K  1
 sgs13n60uf.pdf pdf_icon

SGS137

April 2001 IGBTSGS13N60UFUltra-Fast IGBTGeneral Description FeaturesFairchild's UF series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 6.5AThe UF series is designed for applications such as motor High input impedancecontrol and general inverters where

Datasheet: SGS125 , SGS126 , SGS127 , SGS130 , SGS131 , SGS132 , SGS135 , SGS136 , BC327 , SGS3055 , SGS6386 , SGS6387 , SGS6388 , SGS911 , SGS912 , SGSD00020 , SGSD100 .

Keywords - SGS137 transistor datasheet

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