SK3137 Specs and Replacement
Type Designator: SK3137
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 0.5 MHz
Collector Capacitance (Cc): 150 pF
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
Package: TO92
- BJT ⓘ Cross-Reference Search
SK3137 datasheet
9.2. Size:193K toshiba
2sk3130.pdf 
2SK3130 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3130 Switching Regulator Applications Unit mm Reverse-recovery time trr = 85 ns Built-in high-speed flywheel diode Low drain-source ON resistance RDS (ON) = 1.12 (typ.) High forward transfer admittance Yfs = 5.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS =... See More ⇒
9.3. Size:713K toshiba
2sk3131.pdf
2SK3131 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3131 Chopper Regulator DC-DC Converter and Motor Drive Unit mm Applications Fast reverse recovery time trr = 105 ns (typ.) Built-in high-speed free-wheeling diode Low drain-source ON resistance RDS (ON) = 0.085 (typ.) High forward transfer admittance Yfs = 35 S (typ.) Low l... See More ⇒
9.4. Size:418K toshiba
2sk3132.pdf
2SK3132 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3132 Chopper Regulator DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.07 (typ.) High forward transfer admittance Yfs = 33 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement mode Vth = 2.4 to 3.4 V (VDS... See More ⇒
9.5. Size:101K renesas
rej03g1068 2sk3136ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.6. Size:87K renesas
2sk3136.pdf
2SK3136 Silicon N Channel MOS FET High Speed Power Switching REJ03G1068-0400 (Previous ADE-208-696B) Rev.4.00 Sep 20, 2005 Features Low on-resistance RDS(on) =4.5 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate 2. Drain (Flange) G 3. Source ... See More ⇒
9.7. Size:108K renesas
rej03g1066 2sk3134lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.8. Size:94K renesas
2sk3135.pdf
2SK3135(L), 2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1067-0400 (Previous ADE-208-695B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 6 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(L... See More ⇒
9.9. Size:94K renesas
2sk3134.pdf
2SK3134(L), 2SK3134(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1066-0400 (Previous ADE-208-721B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 4 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(L... See More ⇒
9.10. Size:108K renesas
rej03g1067 2sk3135lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.13. Size:25K hitachi
2sk3133.pdf
2SK3133(L),2SK3133(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-720 (Z) Target Specification 1st. Edition February 1999 Features Low on-resistance RDS(on) = 7 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 2 3 1 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK3133(L),2SK3133(S) Ab... See More ⇒
9.14. Size:279K inchange semiconductor
2sk3130.pdf
isc N-Channel MOSFET Transistor 2SK3130 FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V =600V(Min) DSS Static Drain-Source On-Resistance R = 1.55 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABSO... See More ⇒
9.15. Size:299K inchange semiconductor
2sk313.pdf
isc N-Channel MOSFET Transistor 2SK313 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒
9.16. Size:288K inchange semiconductor
2sk3136.pdf
isc N-Channel MOSFET Transistor 2SK3136 FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V =40V(Min) DSS Static Drain-Source On-Resistance R =5.8 m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
9.17. Size:282K inchange semiconductor
2sk3134l.pdf
isc N-Channel MOSFET Transistor 2SK3134L FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr... See More ⇒
9.18. Size:282K inchange semiconductor
2sk3133l.pdf
isc N-Channel MOSFET Transistor 2SK3133L FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max)@ VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒
9.19. Size:356K inchange semiconductor
2sk3133s.pdf
isc N-Channel MOSFET Transistor 2SK3133S FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max) @VDS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒
9.20. Size:283K inchange semiconductor
2sk3131.pdf
isc N-Channel MOSFET Transistor 2SK3131 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.11 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
9.21. Size:329K inchange semiconductor
2sk3135s.pdf
isc N-Channel MOSFET Transistor 2SK3135S FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒
9.22. Size:284K inchange semiconductor
2sk3132.pdf
isc N-Channel MOSFET Transistor 2SK3132 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 95m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒
9.23. Size:356K inchange semiconductor
2sk3134s.pdf
isc N-Channel MOSFET Transistor 2SK3134S FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr... See More ⇒
9.24. Size:282K inchange semiconductor
2sk3135l.pdf
isc N-Channel MOSFET Transistor 2SK3135L FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒
Detailed specifications: SK3003, SK3010, SK3011, SK3012, SK3026, SK3040, SK3054, SK3114, C5198, SK3182, SK3194, SK3218, SK3247, SK3260, SK3270, SK3356, SK3441
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