SK3441 Specs and Replacement
Type Designator: SK3441
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 130 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 80 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO3
- BJT ⓘ Cross-Reference Search
SK3441 datasheet
0.1. Size:189K toshiba
2sk3441.pdf 
2SK3441 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3441 DC-DC Converter Applications Unit mm Relay Drive and Motor Drive Applications Low drain-source ON resistance RDS (ON) = 4.5 m (typ.) High forward transfer admittance Yfs = 80 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 60 V) Enhancement mode Vth = 1.3 to ... See More ⇒
9.1. Size:188K toshiba
2sk3445.pdf
2SK3445 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3445 Switching Regulator, DC-DC Converter Applications Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) = 90 m (typ.) High forward transfer admittance Yfs = 10 S (typ.) Low leakage current IDSS = 100 A (VDS = 250 V) Enhancement mode Vth = 3.0 to 5... See More ⇒
9.2. Size:187K toshiba
2sk3440.pdf
2SK3440 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3440 Switching Regulator, DC-DC Converter Applications Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) = 6.5 m (typ.) High forward transfer admittance Yfs = 30 S (typ.) Low leakage current IDSS = 100 A (VDS = 60 V) Enhancement mode Vth = 2.0 to 4... See More ⇒
9.3. Size:169K toshiba
2sk3443.pdf
2SK3443 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3443 Switching Regulator, DC-DC Converter and Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) = 50 m (typ.) High forward transfer admittance Yfs = 9 S (typ.) Low leakage current IDSS = 100 A (VDS = 150 V) Enhancementmode Vth = 3.0 to 5.0 V (V... See More ⇒
9.4. Size:167K toshiba
2sk3442.pdf
2SK3442 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3442 Switching Regulator, DC-DC Converter and Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) = 15 m (typ.) High forward transfer admittance Yfs = 28 S (typ.) Low leakage current IDSS = 100 A (VDS = 100 V) Enhancement mode Vth = 2.0 4.0 V (VD... See More ⇒
9.5. Size:222K toshiba
2sk3444.pdf
2SK3444 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3444 Switching Regulator, DC-DC Converter Applications Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) = 65 m (typ.) High forward transfer admittance Y = 10 S (typ.) fs Low leakage current I = 100 A (V = 200 V) DSS DS Enhancement-mode Vth = 3.... See More ⇒
9.6. Size:28K sanyo
2sk3449.pdf
Ordering number ENN6672 2SK3449 N-Channel Silicon MOSFET 2SK3449 DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2190 4V drive. [2SK3449] 8.0 4.0 3.3 1.0 1.0 3.0 1.6 0.8 0.8 0.75 0.7 1 Source 1 2 3 2 Drain 3 Gate Specifications 2.4 4.8 SANYO TO-126ML Absolute Maximum Ratings at Ta=... See More ⇒
9.7. Size:27K sanyo
2sk3448.pdf
Ordering number ENN6785 2SK3448 N-Channel Silicon MOSFET 2SK3448 Ultrahigh-Speed Switching Use Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2087A 4V drive. [2SK3448] Meets radial taping. 2.5 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Source 2 Drain 3 Gate 2.54 2.54 Specifications SANYO NMP Absolute Maximum Ratin... See More ⇒
9.8. Size:93K renesas
rej03g1101 2sk3447ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.9. Size:82K renesas
2sk3446.pdf
2SK3446 Silicon N Channel Power MOS FET Power Switching REJ03G1100-0800 (Previous ADE-208-1566F) Rev.8.00 Sep 07, 2005 Features Capable of 2.5 V gate drive Low drive current Low on-resistance RDS (on) = 1.5 typ. (at VGS = 4 V) Outline RENESAS Package code PRSS0003DC-A (Package name TO-92MOD) D 1. Source G 2. Drain 3. Gate 3 2 1 S Rev.8.00 ... See More ⇒
9.10. Size:80K renesas
2sk3447.pdf
2SK3447 Silicon N Channel Power MOS FET Power Switching REJ03G1101-0700 (Previous ADE-208-1567E) Rev.7.00 Sep 07, 2005 Features Capable of 4 V gate drive Low drive current Low on-resistance RDS (on) = 1.5 typ. (at VGS = 10 V) Outline RENESAS Package code PRSS0003DC-A (Package name TO-92MOD) D 1. Source G 2. Drain 3. Gate 3 2 1 S Rev.7.00 S... See More ⇒
9.11. Size:95K renesas
rej03g1100 2sk3446ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
Detailed specifications: SK3137, SK3182, SK3194, SK3218, SK3247, SK3260, SK3270, SK3356, TIP3055, SK3511, SK3538, SK3623, SK5801, SK6346, SM1258, SM1259, SM2159
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