SK6346 Specs and Replacement
Type Designator: SK6346
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
SK6346 Substitution
- BJT ⓘ Cross-Reference Search
SK6346 datasheet
isc N-Channel MOSFET Transistor 2SK634 FEATURES Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay d... See More ⇒
Detailed specifications: SK3260, SK3270, SK3356, SK3441, SK3511, SK3538, SK3623, SK5801, 2N3906, SM1258, SM1259, SM2159, SM2160, SM2160P, SM2164, SM2165, SM2174
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