2N5177 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2N5177 Specs and Replacement

Type Designator: 2N5177

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 55 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: MD36

2N5177 Substitution

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2N5177 datasheet

9.1. Size:289K fairchild semi

2n5172.pdf pdf_icon

2N5172 B TO-92 C E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 25 V VEBO Em... See More ⇒

9.2. Size:70K central

2n5172 2n6076 mps5172 mps6076.pdf pdf_icon

TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com ... See More ⇒

9.3. Size:60K central

2n5179.pdf pdf_icon

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒

9.4. Size:75K secos

2n5172.pdf pdf_icon

2N5172 0.5 A, 25 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 General Purpose Amplifier Transistor G H Emitter Collector Base J A D Collector Millimeter REF. Min. Max. B A 4.40 4.70 B 4.30 4.70 K C 12.70 - D 3.30 3.81 E 0.3... See More ⇒