All Transistors. 2N5177 Datasheet

 

2N5177 Datasheet and Replacement


   Type Designator: 2N5177
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: MD36
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2N5177 Datasheet (PDF)

 9.1. Size:289K  fairchild semi
2n5172.pdf pdf_icon

2N5177

2N5172B TO-92CENPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 300 mA. Sourcedfrom Process 10. See PN100 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VVCBO Collector-Base Voltage 25 VVEBO Em

 9.2. Size:70K  central
2n5172 2n6076 mps5172 mps6076.pdf pdf_icon

2N5177

TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com

 9.3. Size:60K  central
2n5179.pdf pdf_icon

2N5177

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 9.4. Size:75K  secos
2n5172.pdf pdf_icon

2N5177

2N5172 0.5 A, 25 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 General Purpose Amplifier TransistorG H EmitterCollector Base JA DCollector Millimeter REF.Min. Max.BA 4.40 4.70B 4.30 4.70K C 12.70 -D 3.30 3.81 E 0.3

Datasheet: 2N5161 , 2N5162 , 2N517 , 2N5172 , 2N5173 , 2N5174 , 2N5175 , 2N5176 , 2SD400 , 2N5178 , 2N5179 , 2N518 , 2N5180 , 2N5181 , 2N5182 , 2N5183 , 2N5184 .

History: CSC1213C | D880C | 3DD13009_X8D | 2SA708A | 2N520A | TIP32A

Keywords - 2N5177 transistor datasheet

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