SMBT3905 Datasheet, Equivalent, Cross Reference Search
Type Designator: SMBT3905
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.31 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO236
SMBT3905 Transistor Equivalent Substitute - Cross-Reference Search
SMBT3905 Datasheet (PDF)
smbt3906.pdf
PNP Silicon Switching Transistor SMBT 3906 High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type: SMBT 3904 (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3SMBT 3906 s2A Q68000-A4417 B E C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE0 40 VCollector-base voltage VCB0
smbt3906 s2a sot363.pdf
SMBT 3906SPNP Silicon Switching Transistor Array4 High DC current gain: 0.1mA to 100mA5 Low collector-emitter saturation voltage6 Two ( galvanic) internal isolated Transistors with high matching in one package Complementary type: SMBT 3904S (NPN)32VPS056041Type Marking Ordering Code Pin Configuration PackageSMBT 3906S s2A Q62702-A1202 1/4=E1/E2 2/5=B1/B
smbt3904 s1a sot23.pdf
NPN Silicon Switching Transistor SMBT 3904 High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type: SMBT 3906 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3SMBT 3904 s1A Q68000-A4416 B E C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE0 40 VCollector-base voltage VCB0
smbt3904.pdf
NPN Silicon Switching Transistor SMBT 3904 High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type: SMBT 3906 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3SMBT 3904 s1A Q68000-A4416 B E C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE0 40 VCollector-base voltage VCB0
smbt3904s s1a sot363.pdf
SMBT 3904SNPN Silicon Switching Transistor Array4 High DC current gain: 0.1mA to 100mA5 Low collector-emitter saturation voltage6 Two ( galvanic) internal isolated Transistors with high matching in one package Complementary type: SMBT 3906S (PNP)32VPS056041Type Marking Ordering Code Pin Configuration PackageSMBT 3904S s1A Q62702-A1201 1/4=E1/E2 2/5=B1/B
smbt3904pn s3p sot363.pdf
SMBT 3904PNNPN Silicon Switching Transistor ArrayPreliminary data4 High current gain5 Low collector-emitter saturation voltage6 Two (galvanic) internal isolated NPN/PNP Transistors in one package32VPS056041PIN ConfigurationType Marking Ordering Code Package NPN-Transistor 1 = E 2 = B 6 = CSMBT 3904PN s3P Q62702-C SOT-363 PNP-Transistor 4 = E 5 = B 6 = C
smbt3904 mmbt3904 smbt3904s.pdf
SMBT3904...MMBT3904NPN Silicon Switching Transistors High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in one package Complementary types: SMBT3906... MMBT3906 SMBT3904S: For orientation in reel see package information below Pb-free (RoHS compliant)
smbt3906 mmbt3906 smbt3906s smbt3906u.pdf
SMBT3906...MMBT3906PNP Silicon Switching Transistors High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with good matching in one package Complementary types: SMBT3904...MMBT3904 (NPN) SMBT3906S/ U: for orientation in reel see package information below P
smbt3906 mmbt3906.pdf
SMBT3906/ MMBT3906PNP Silicon Switching Transistor3 High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type: 2 SMBT3904/ MMBT3904 (NPN)1VPS05161Type Marking Pin Configuration PackageSMBT3906/ MMBT3906 s2A SOT231 = B 2 = E 3 = CMaximum RatingsParameter Symbol Value Unit40 VCollector-emitter voltage VCEO40Coll
smbt3904series mmbt3904.pdf
SMBT3904...MMBT3904NPN Silicon Switching Transistors High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S / SMBT3904U: Two (galvanic) internal isolated transistors with good matching in one package Complementary types: SMBT3906... MMBT3906 SMBT3904S / U: For orientation in reel see package information below Pb-free
smbt3904pn smbt3904upn.pdf
SMBT3904...PNNPN / PNP Silicon Switching Transistor Array High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN / PNP transistor in one package Pb-free (RoHS compliant) package Qualified according AEC Q101SMBT3904PNSMBT3904UPNC1 B2 E26 5 4TR2TR11 2 3E1 B1 C2EHA07177Type Marking Pin Configuration Package
smbt3906-s-u mmbt3906.pdf
SMBT3906...MMBT3906PNP Silicon Switching Transistors High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with good matching in one package Complementary types: SMBT3904...MMBT3904 (NPN) SMBT3906S/ U: for orientation in reel see package information below P
smbt3906u.pdf
SMBT3906UPNP Silicon Switching Transistor Array4 High DC current gain: 0.1mA to 100mA56 Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors with good matching in one package32 Complementary type: SMBT3904U (NPN)1C1 B2 E2 VPW091976 5 4TR2TR11 2 3E1 B1 C2EHA07175Type Marking Pin Configuration PackageSMBT3906U s2A 1=E1 2=
mbt3906dw1 smbt3906dw1.pdf
MBT3906DW1,SMBT3906DW1Dual General PurposeTransistorThe MBT3906DW1 device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mountapplicat
smbt3904dw1t1g mbt3904dw.pdf
MBT3904DW1T1G,MBT3904DW2T1G,SMBT3904DW1T1GDual General PurposeTransistorshttp://onsemi.comThe MBT3904DW1T1G and MBT3904DW2T1G devices are aspin-off of our popular SOT-23/SOT-323 three-leaded device. It isMARKINGdesigned for general purpose amplifier applications and is housed inDIAGRAMthe SOT-363 six-leaded surface mount package. By putting two6discrete devices in one
mbt3904dw1 mbt3904dw2 smbt3904dw1 nsvmbt3904dw1.pdf
MBT3904DW1,MBT3904DW2,SMBT3904DW1,NSVMBT3904DW1Dual General Purposewww.onsemi.comTransistorsMARKINGThe MBT3904DW1 and MBT3904DW2 devices are a spin-off ofDIAGRAMour popular SOT-23/SOT-323 three-leaded device. It is designed for6general purpose amplifier applications and is housed in the SOT-363SOT-363/SC-88/six-leaded surface mount package. By putting two discrete de
mbt3906dw1t1g smbt3906dw1t1g.pdf
MBT3906DW1T1G,SMBT3906DW1T1GDual General PurposeTransistorThe MBT3906DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mount
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .