SQ4957 Datasheet, Equivalent, Cross Reference Search
Type Designator: SQ4957
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1600 MHz
Collector Capacitance (Cc): 0.4 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: PLCC20
SQ4957 Transistor Equivalent Substitute - Cross-Reference Search
SQ4957 Datasheet (PDF)
9.1. Size:250K vishay
sq4953ey.pdf
sq4953ey.pdf
SQ4953EYwww.vishay.comVishay SiliconixAutomotive Dual P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 30 AEC-Q101 QualifiedcRDS(on) () at VGS = - 10 V 0.045 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.085 Material categorization:ID (A) per leg - 6.6For definitions of compliance please see Co
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
