SQ4957 Specs and Replacement
Type Designator: SQ4957
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 1600 MHz
Collector Capacitance (Cc): 0.4 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: PLCC20
SQ4957 Substitution
- BJT ⓘ Cross-Reference Search
SQ4957 datasheet
SQ4953EY www.vishay.com Vishay Siliconix Automotive Dual P-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) - 30 AEC-Q101 Qualifiedc RDS(on) ( ) at VGS = - 10 V 0.045 100 % Rg and UIS Tested RDS(on) ( ) at VGS = - 4.5 V 0.085 Material categorization ID (A) per leg - 6.6 For definitions of compliance please see Co... See More ⇒
Detailed specifications: SQ3019, SQ3019F, SQ3866A, SQ3866AF, SQ3960, SQ3960F, SQ4261, SQ4261F, BC547B, SQ4957F, SQ5109, SQ5109F, SQ918, SQ918F, SS1906, SS2503A, SS8050
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