ST13 Specs and Replacement
Type Designator: ST13
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.025 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 12 MHz
Collector Capacitance (Cc): 16 pF
Forward Current Transfer Ratio (hFE), MIN: 45
Noise Figure, dB: -
Package: TO5
- BJT ⓘ Cross-Reference Search
ST13 datasheet
0.1. Size:141K st
st13003d-k.pdf 
ST13003D-K High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Integrated antiparallel collector-emitter diode 1 2 3 Applications SOT-32 Electronic ballast for fluorescent lighting Description Figure 1. Internal schemati... See More ⇒
0.2. Size:214K st
st13007d.pdf
ST13007D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR IMPROVED SPECIFICATION - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY INTEGRATED FREE-WHEELING DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR 3 2 RELIABLE OPERATION 1 VERY HIGH SWITCHING SPEED FULLY CHARACT... See More ⇒
0.3. Size:80K st
st13003.pdf
ST13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING 1 2 SWITCH MODE POWER SUPPLIES 3 DESCRIPTION SOT-32 The device is manufactured using high voltage Multi Epitaxial Planar te... See More ⇒
0.4. Size:218K st
st13003-k.pdf
ST13003-K High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Very high switching speed Applications 1 2 Electronic ballast for fluorescent lighting (CFL) 3 SMPS for battery charger SOT-32 Description The device is manufactured using high voltage Figure 1. Internal schematic diagram multi-epitaxi... See More ⇒
0.5. Size:160K st
st13007dfp.pdf
ST13007DFP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR IMPROVED SPECIFICATION - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY INTEGRATED FREE-WHEELING DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR 3 2 RELIABLE OPERATION 1 VERY HIGH SWITCHING SPEED FULLY CHARA... See More ⇒
0.6. Size:283K st
st13005n.pdf
ST13005N HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR MEDIUM VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS COMPACT FLUORESCENT LAMP (CFL) 3 2 ELECTRONIC BALLASTS FOR 1 FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES TO-220 DESCRIPTION The device is ... See More ⇒
0.7. Size:68K st
st13007-.pdf
ST13007FP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR HIGH VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED o FULLY CHARACTERIZED AT 125 C LARGE RBSOA 3 2 APPLICATIONS 1 ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING TO-220FP SWITCH MODE POWER SUPPLIES DESCRIPTION ... See More ⇒
0.8. Size:252K st
st13007.pdf
ST13007 High voltage fast-switching NPN power transistor Features DC current gain classification TAB High voltage capability Low spread of dynamic parameters Very high switching speed Applications 3 2 1 Electronic ballast for fluorescent lighting TO-220 Switch mode power supplies Description Figure 1. Internal schematic diagram The device is manufactured ... See More ⇒
0.9. Size:163K st
st13003dn.pdf
ST13003DN High voltage fast-switching NPN power transistor Preliminary data Features High voltage capability Low spread of dynamic parameters Very high switching speed Integrated free-wheeling diode 3 Application 2 1 Compact fluorescent lamps (CFLs) SOT-32 Description The device is manufactured using high voltage multi epitaxial planar technology for high swi... See More ⇒
0.10. Size:203K st
st13003n.pdf
ST13003N High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Very high switching speed Application 3 2 Compact fluorescent lamps (CFLs) 1 SOT-32 Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a... See More ⇒
0.11. Size:175K st
st13009.pdf
ST13009 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed 3 Applications 2 1 Switch mode power supplies TO-220 Description The device is manufactured using high voltage multi-epitaxial planar technology for high Figure... See More ⇒
0.12. Size:241K st
st13003 st13003-k.pdf
ST13003, ST13003-K High voltage fast-switching NPN power transistor Datasheet - production data Features High voltage capability Low spread of dynamic parameters Very high switching speed Applications 3 2 Electronic ballast for fluorescent lighting (CFL) 1 SMPS for battery charger SOT-32 Description Figure 1. Internal schematic diagram The device is manufact... See More ⇒
0.13. Size:236K st
st13005.pdf
ST13005 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications 3 2 1 Electronic ballast for fluorescent lighting Switch mode power supplies TO-220 Description The device is manufactured using high voltage multi-epitaxial planar technology... See More ⇒
0.14. Size:52K fairchild semi
kst13.pdf
KST13/14 Darlington Amplifier Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCES Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector Current 300 mA PC Collector Power Dissipation 350 mW TSTG Stora... See More ⇒
0.15. Size:42K samsung
kst13.pdf
KST13/14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCES 30 V Emitter-Base Voltage VEBO 10 V Collector Current IC 300 mA Collector Dissipation PC 350 mW Storage Temperature TSTG 150 1. Base 2. Emitter 3. Collector ELECTRICAL... See More ⇒
0.16. Size:160K semtech
st13003.pdf
ST 13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. The transistor is subdivided into one group according to its DC current gain. TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 600 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage VEBO 9 V Co... See More ⇒
0.17. Size:615K semtech
st13003h.pdf
ST 13003H NPN Silicon Epitaxial Planar Transistor for high voltage and high speed switching applications 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Emitter Voltage VCES 900 V Collector Emitter Voltage VCEO 500 V Emitter Base Voltage VEBO 9 V Collector Current (f 100 Hz, Duty cycle 50 %)... See More ⇒
0.18. Size:644K semtech
st13002t st13003t.pdf
ST 13002T / 13003T NPN Silicon Power Transistors E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Emitter Voltage 13002T 300 VCEO(sus) V 13003T 400 Collector Emitter Voltage 13002T 600 VCEV V 13003T 700 Emitter Base Voltage VEBO 9 V Collector Current IC 1.5 A Peak Collector Current at t = 5 ms ICM 3 A Base C... See More ⇒
0.19. Size:380K semtech
st13007.pdf
ST 13007 NPN Silicon Transistor for high voltage, high-speed power switching application TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage VEBO 9 V Collector Current IC 8 A O Total Power Dissipation (Ta = 25 C) Ptot 2 W O Total Power Dissipation (... See More ⇒
0.20. Size:633K semtech
st13005.pdf
ST 13005 NPN Silicon Power Transistors for high-voltage, high-speed power switching applications. TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 700 V Collector Base Voltage VCBO 400 V Collector Emitter Voltage VCEO Emitter Base Voltage VEBO 9 V Collector Current IC 4 A O Power Dissipation (Ta = 25 C) Ptot 2 W O Power Dissipati... See More ⇒
0.21. Size:379K stansontech
st13p10.pdf
ST13P10 P Channel Enhancement Mode MOSFET -13.0A DESCRIPTION ST13P10 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST13P10 has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been ... See More ⇒
Detailed specifications: SS9018, ST03, ST10, ST1026, ST1050, ST11, ST12, ST1290, 2N5551, ST14, ST150, ST1504, ST1505, ST1523, ST1524, ST1525, ST1527
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