ST57 Datasheet, Equivalent, Cross Reference Search
Type Designator: ST57
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
ST57 Transistor Equivalent Substitute - Cross-Reference Search
ST57 Datasheet (PDF)
0.1. Size:26K fairchild semi
st5771-1.pdf
st5771-1.pdf
Discrete POWER & SignalTechnologiesST5771-1C TO-92BEPNP Switching TransistorThis device is designed for high speed saturated switchingapplications at currents to 100mA. Sourced from Process 65.See PN4258 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 15 VV Collector-Base Voltage
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
