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ST57 Specs and Replacement

Type Designator: ST57

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.36 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

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ST57 datasheet

 0.1. Size:26K  fairchild semi

st5771-1.pdf pdf_icon

ST57

Discrete POWER & Signal Technologies ST5771-1 C TO-92 B E PNP Switching Transistor This device is designed for high speed saturated switching applications at currents to 100mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V V Collector-Base Voltage ... See More ⇒

Detailed specifications: ST42, ST4201, ST4202, ST4203, ST4204, ST44, ST502, ST54, TIP31, ST5771-1, ST5771-2, ST6008, ST6010, ST61, ST63, ST8033, ST8035

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